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Full-Text Articles in Physics
Silicon Nitride As Antireflection Coating To Enhance The Conversion Efficiency Of Silicon Solar Cells, Rajinder Sharma
Silicon Nitride As Antireflection Coating To Enhance The Conversion Efficiency Of Silicon Solar Cells, Rajinder Sharma
Turkish Journal of Physics
The aim of this work is to investigate the effect of single and double layer antireflection coating (ARC) on the performance of silicon solar cells. In this regard, various previous works on single and double layer ARCs have been consulted. Silicon nitride (Si3N4) has been used as ARC material because of its varying refractive index (1.8-3.0). Numerical calculations have been performed to obtain the reflectance for single and double layer Si3N4 using the transfer matrix method. Double layer antireflection coating (DLARC) of Si3N4 is found to have significant advantages over single layer antireflection coating (SLARC). Calculated reflectances have been further …
Optical Visible Wavelength Region Selective Reflector Design For Photovoltaic Cells Using Photonic Crystal, Veysel Korkmaz, Ali̇ Çeti̇n
Optical Visible Wavelength Region Selective Reflector Design For Photovoltaic Cells Using Photonic Crystal, Veysel Korkmaz, Ali̇ Çeti̇n
Turkish Journal of Physics
In this study, we have proposed an optical broadband angular reflector having a band selective feature and high reflectivity rate for photovoltaic implementations by using a photonic crystal structure made of two different dielectric layers. This paper presents new and useful information about a reflector that was designed by using a periodic structure composed of two Si based layers for the visible range in the solar spectrum region. The system has been adjusted in such a way that it could cover a wide wavelength area between the photonic band gaps at nearly λ ≈ 300-800 nm. We have tested the …
Enhancing Silicon Solar Cell Efficiency With Double Layer Antireflection Coating, Mohamed Medhat, El-Sayed El-Zaiat, Samy Farag, Gamal Youssef, Reda Alkhadry
Enhancing Silicon Solar Cell Efficiency With Double Layer Antireflection Coating, Mohamed Medhat, El-Sayed El-Zaiat, Samy Farag, Gamal Youssef, Reda Alkhadry
Turkish Journal of Physics
Antireflection coating on silicon, a high refractive index substrate, was theoretically investigated. The effects of antireflection coating on electrical parameters such as the short circuit current, open circuit voltage, maximum current density, maximum voltage, maximum power, power density, and conversion efficiency of the solar cell were simulated. Various previous works in which solar cell efficiencies were investigated after applying double layer antireflection coating (DLARC) were reviewed. Ti$_{2}$O$_{3}$ and MgF$_{2}$ were then applied in a DLARC design, taking into consideration the refractive index dispersion of the two materials. The results were compared with other works in the solar spectral range (400-1200 …
An Approach To Extract The Parameters Of Solar Cells From Their Illuminated I-V Curves Using The Lambert W Function, Ahmed A. El Tayyan
An Approach To Extract The Parameters Of Solar Cells From Their Illuminated I-V Curves Using The Lambert W Function, Ahmed A. El Tayyan
Turkish Journal of Physics
In this article an approach based on the Lambert W function is applied to analysis of various types solar cells and solar modules at a given insolation level and temperature; it can be used to extract accurate values of the parameters of a solar cell/module using experimental data or information available from the datasheet. These parameters are the photocurrent I_{ph}, the reverse saturation current I_o, the diode ideality factor a, the series resistance R_s, and the shunt resistance R_{sh}. The parameters I_o, a, R_s, and R_{sh} are calculated with the aid of 4 equations that can be solved simultaneously while …
On The Capacitance Of Crystalline Silicon Solar Cells In Steady State, Fabe Idrissa Barro, Moustapha Sane, Bernard Zouma
On The Capacitance Of Crystalline Silicon Solar Cells In Steady State, Fabe Idrissa Barro, Moustapha Sane, Bernard Zouma
Turkish Journal of Physics
In this work, an analytical approach is presented for modeling the capacitance of crystalline silicon solar cells. Based on a one-dimensional modeling of the cell, the excess minority carrier density, the photovoltage, and the capacitance are calculated. The motivation of this work are two-fold: to show base doping density and illumination effects on the capacitance of silicon solar cells, and to propose a determination technique for both dark capacitance and base doping density from C-V characteristics.
Photovoltaic Enhancement Of Si Micro- And Nanostructure Solar Cells Via Ultrafast Laser Texturing, Falah A. H. Mutlak
Photovoltaic Enhancement Of Si Micro- And Nanostructure Solar Cells Via Ultrafast Laser Texturing, Falah A. H. Mutlak
Turkish Journal of Physics
The purpose of the present study was to achieve laser-microtextured Si structures, the material used as silicon wafers, with a thickness of 330 mu m for a fast laser texturing technique, in order to produce micro-/nanosurface textures by means of a UV femtosecond laser. A textured silicon surface was prepared that has the capability to trap light, thereby greatly reducing the visible light reflection for photovoltaic cells. The textured surface was measured by scanning electron microscope. The results showed a photocurrent increase of about 25% in the laser-textured zones.
A 3d Model For Thickness And Diffusion Capacitance Of Emitter-Base Junction Determination In A Bifacial Polycrystalline Solar Cell Under Real Operating Condition, Senghane Mbodji, Babacar Mbow, Fabe Idrissa Barro, Gregoire Sissoko
A 3d Model For Thickness And Diffusion Capacitance Of Emitter-Base Junction Determination In A Bifacial Polycrystalline Solar Cell Under Real Operating Condition, Senghane Mbodji, Babacar Mbow, Fabe Idrissa Barro, Gregoire Sissoko
Turkish Journal of Physics
This paper aims at presenting the behaviour of the space charge region for an n^+-p-p^+ bifacial solar cell under monochromatic illumination. It also deals with mathematical relations in the describing and the use of new approach that involves both junction and back surface recombination velocities with a 3D modelling study. Based on the normalized carriers' density, versus base depth, the space-charge layer thickness (Z_{0,u}) is studied for various parameters such as grain size g, grain boundaries recombination velocity S_{gb}, wavelength \lambda and for different operating conditions. Therefore, the relationship between Z_{0,u} and the diffusion capacitance C_u show that junction in …
Preparation And Study Of The Structural, Optical And Electrical Properties Of Cu(In,Ga)Se_2 Thin Films, Athar Javed
Preparation And Study Of The Structural, Optical And Electrical Properties Of Cu(In,Ga)Se_2 Thin Films, Athar Javed
Turkish Journal of Physics
Thin film samples of Cu(In,Ga)Se_2 (CIGS) were prepared at room temperature by physical vapor deposition (PVD) technique using resistive heating method onto soda lime glass substrates. Deposition conditions were same for all the samples. The prepared samples were annealed in vacuum at temperature of 200 °C for 5, 10, 15, 30 and 60 minutes and were characterized structurally, optically and electrically. The structural analysis indicate the partial formation of quaternary CIGS compounds for the samples which were annealed in vacuum at 200 °C for 30 and 60 minutes. XRD analysis indicate that there is a continuous growth and improvement in …
Determination Of Defect Distribution In A Ga-Rich Zno/Cds/Cu(In,Ga)Se_2 Solar Cell By Admittance Spectroscopy, Habi̇be Bayhan
Determination Of Defect Distribution In A Ga-Rich Zno/Cds/Cu(In,Ga)Se_2 Solar Cell By Admittance Spectroscopy, Habi̇be Bayhan
Turkish Journal of Physics
This article presents a study on the energy distribution of defects in efficient thin film ZnO/CdS/Cu(In,Ga)Se_2 heterojunction solar cell by the use of admittance spectroscopy. The capacitance spectra of the device has been analyzed using a model based on the existence of a homogeneous distribution of bulk acceptors in the absorber Cu(In,Ga)Se_2 layer. This model reveals an emission from a distribution of hole traps centered at an activation energy of about 300 meV with a defect density of 1.2 \times 10^{17} eV^{-1} cm^{-3}. The band gap of the absorber layer is estimated to be about 1.46 eV which corresponds to …
Admittance And Impedance Spectroscopy On Cu(In,Ga)Se_2 Solar Cells, A. Sertap Kavasoglu, Habi̇be Bayhan
Admittance And Impedance Spectroscopy On Cu(In,Ga)Se_2 Solar Cells, A. Sertap Kavasoglu, Habi̇be Bayhan
Turkish Journal of Physics
The present work reports some experimental results on the electrical properties of high efficiency ZnO/CdS/Cu(In,Ga)Se_2 heterojunction solar cells. Admittance spectroscopy has been employed for characterisation of the bulk and interface levels in the absorber Cu(In,Ga)Se_2 layer. The temperature dependent capacitance-frequency analysis indicated an emission from a shallow acceptor like defect level with an activation energy of about 75 meV. Information on the equivalent circuit model of the devices has been provided by the analysis of impedance measurements. The impedance data are presented in the Nyquist plot at several dc bias voltages at 300 K. The equivalent circuit model consisting of …