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Full-Text Articles in Physics
Elaboration And Study Of Structural And Optical Properties Of Aubr Nanocrystalsdispersed In Kbr Single Crystals, Hanane Zaioune, Fouzia Zehani, Noureddine Boutaoui, Badis Khennaoui
Elaboration And Study Of Structural And Optical Properties Of Aubr Nanocrystalsdispersed In Kbr Single Crystals, Hanane Zaioune, Fouzia Zehani, Noureddine Boutaoui, Badis Khennaoui
Turkish Journal of Physics
The structural and optical properties of the AuBr nanocrystals embedded in the KBr single crystals grown by the Czochralski method were studied using several techniques. The X-ray diffraction reveals their formation and incorporation. The crystallite average radii calculated from XRD using the Scherrer's formula was found to vary between 19 and 39 nm. The photoluminescence spectra obtained on these same samples present an emission band located at 1.91 eV (650 nm), which can be attributed to the orange luminescence of AuBr nanocrystals. However, the photoluminescence excitation measurements of these nanocrystals exhibit an excitation band located at 3.44 eV (360 nm), …
Processing Of Germanium For Integrated Circuits, Ray Duffy, Maryam Shayesteh, Ran Yu
Processing Of Germanium For Integrated Circuits, Ray Duffy, Maryam Shayesteh, Ran Yu
Turkish Journal of Physics
In this review paper the authors will focus on Ge processing for integrated circuits. The key areas that require the most attention are substrates and integration, gate dielectrics, and access resistance. We will discuss each of these topics in turn, while also reviewing the most scaled Ge field-effect-transistor devices, and consider how modelling activities have matured for Ge in recent years.
Semiconducting Properties Of In_3te_4 Crystals: An Experimental Study, Gadelkarim Ata Gamal, Mohamed Ali Abouzied, Mohamud Fouad Sanaa
Semiconducting Properties Of In_3te_4 Crystals: An Experimental Study, Gadelkarim Ata Gamal, Mohamed Ali Abouzied, Mohamud Fouad Sanaa
Turkish Journal of Physics
IndiumTelluride In_3Te_4 crystal was characterized for electrical conductivity, Hall mobility, carrier concentration, and thermoelectric power (TEP) as a function of temperature in the range 202--526 K this was done with the aid of liquid nitrogen which enabled us to detect the intrinsic behavior. The crystals were prepared by a modified vertical Bridgman technique. Throughout these measurements various physical parameters, such as effective mass of charge carriers, carrier mobility, diffusion coefficient, and relaxation time for both majority and minority carriers were found.
Hydrogen Implantation Effects On The Electrical And Optical Properties Of Inse Thin Films, Atef Fayez Qasrawi, Khaled Faisal Ilaiwi, Antonio Polimeni
Hydrogen Implantation Effects On The Electrical And Optical Properties Of Inse Thin Films, Atef Fayez Qasrawi, Khaled Faisal Ilaiwi, Antonio Polimeni
Turkish Journal of Physics
The effects of hydrogen ion implantation on the structural, electrical and optical properties of amorphous InSe thin films have been investigated. X-ray diffraction analysis revealed no change in the structure of the films. An implantation of 7.3 x 10^{18} ions/cm^2 decreased the electrical conductivity by three orders of magnitude at 300 K. Similarly, the conductivity activation energy, which was calculated in the temperature range of 300-420 K, decreased from 210 to 78 meV by H-ion implantation. The optical measurements showed that the direct allowed transitions energy band gap of amorphous InSe films has decreased from 1.50 to 0.97 eV by …
Dispersion Analysis Of Sns And Snse, Haluk Şafak, Mustafa Merdan, Ö. Faruk Yüksel
Dispersion Analysis Of Sns And Snse, Haluk Şafak, Mustafa Merdan, Ö. Faruk Yüksel
Turkish Journal of Physics
The reflectance spectra of single crystals of SnS and SnSe were measured at normal incidence by unpolarized light. The refractive indices of speciemens were calculated by Kramers-Kronig Analysis. On the basis of the Wemple diDomenico single oscillator model, the dispersion parameters were determined. It is found that the parameters obtained by unpolarized light are, in general close to those reported for polarized cases. Morever, a close similarity were observed with E//b polarization for SnS.