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Full-Text Articles in Physics
Analysis Of Quantum-Dot-Embedded Multicavity Arrays For On-Chip Wdm Applications, Havva Erdi̇nç, Serdar Kocaman
Analysis Of Quantum-Dot-Embedded Multicavity Arrays For On-Chip Wdm Applications, Havva Erdi̇nç, Serdar Kocaman
Turkish Journal of Physics
Transmission and group delay characteristics of a single-quantum-dot-(QD)-embedded double-cavity array and a triple-cavity array are compared theoretically in the weak coupling regime. When the extrinsic cavity decay rate is comparably higher than the intrinsic cavity decay rate at equal coupling strengths and normalized detuning values, transmission values of both systems converge with each other but the phase delay generated at triple-cavity systems is higher than that of the single-QD-embedded double-cavity array system. The results confirmed by the transmission calculations for both cases provide a comparative tool for designing on chip wavelength division multiplexing systems.
Electrochemical Capacitance-Voltage Profiling Of Nonuniformly Doped Gaas Heterostructures With Sqws And Mqws For Led Applications, George Yakovlev, Vasily Zubkov, Anna Solomnikova, Oleg Derevianko
Electrochemical Capacitance-Voltage Profiling Of Nonuniformly Doped Gaas Heterostructures With Sqws And Mqws For Led Applications, George Yakovlev, Vasily Zubkov, Anna Solomnikova, Oleg Derevianko
Turkish Journal of Physics
Light-emitting heterostructures with single and multiple GaAs/InGaAs quantum wells have been investigated by means of electrochemical capacitance-voltage (ECV) profiling. Capacitance-voltage characteristics were measured; concentration profiles of free charge carriers over the heterostructure depth as well as the intensity of quantum well filling by charge carriers were obtained. In heterostructures with a single quantum well (QW), we considered limitations of capacitance techniques for undoped QW profiling, which are situated near the metallurgic border of the p-n junction. We made a detailed consideration of phenomena related to Debye smearing and we developed and analyzed the dependence of the space charge region width …
Promising Features Of In$_{0.5}$Ga$_{0.5}$N/Al$_{0.2}$Ga$_{0.8}$N Quantum Dot Lasers, Halima Bouchenafa, Badra Bouabdallah, Boucif Benichou
Promising Features Of In$_{0.5}$Ga$_{0.5}$N/Al$_{0.2}$Ga$_{0.8}$N Quantum Dot Lasers, Halima Bouchenafa, Badra Bouabdallah, Boucif Benichou
Turkish Journal of Physics
The group-III nitrides, InN, GaN, and AlN, and their alloys have emerged as one of the most important material classes for optoelectronic devices. The incorporation of quantum dots (QDs) as active material improves the performance of conventional optoelectronic devices, such as laser diodes. In this study, we present a theoretical analysis of the gain characteristics of In$_{x}$Ga$_{1-x}$N/Al$_{0.2}$Ga$_{0.8}$N three-dimensional quantum box lasers, based on the density matrix theory of semiconductor lasers with relaxation broadening. The study is done on three samples of QDs: GaN/Al$_{0.2}$Ga$_{0.8}$N, In$_{0.3}$Ga$_{0.7}$N/Al$_{0.2}$Ga$_{0.8}$N, and In$_{0.5}$Ga$_{0.5}$N/Al$_{0.2}$Ga$_{0.8}$N. A comparative study of the gain spectra of GaN/Al$_{0.2}$Ga$_{0.8}$N-based quantum-well and QD lasers is …
The Magnetic Properties Of A Quantum Dot In A Magnetic Field, Ayham Shaer, Mohammad Elsaid, Musa Elhasan
The Magnetic Properties Of A Quantum Dot In A Magnetic Field, Ayham Shaer, Mohammad Elsaid, Musa Elhasan
Turkish Journal of Physics
We calculate the magnetization and susceptibility of two interacting electrons confined in a quantum dot presented in a magnetic field by solving the Hamiltonian using the exact diagonalization method. We investigate the dependence of the magnetization and susceptibility on temperature, magnetic field, and confining frequency. The singlet-triplet transitions in the ground state of the quantum dot spectra and the corresponding jumps in the magnetization curves are shown. The comparisons show that our results are in very good agreement with reported works.
Applications Of Genetic Algorithm To Quantum Mechanical Systems, Mehmet Şahi̇n, Ülfet Atav, Mehmet Tomak
Applications Of Genetic Algorithm To Quantum Mechanical Systems, Mehmet Şahi̇n, Ülfet Atav, Mehmet Tomak
Turkish Journal of Physics
Genetic algorithm (GA) inspired by the biological world is a general search and optimization method. It was first proposed by Holland in 1975. GA has been applied to many scientific areas especially in engineering optimization problems. It is also used in solving of quantum mechanical problems. In this study, we have applied this method to different realistic quantum mechanical problems of both self-consistent and non-self-consistent type. The results obtained are compared with the results of other methods and it is seen that the GA can be a very powerful alternative to some other traditional techniques such as variational method.