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Full-Text Articles in Physics
Properties Of Pbs Thin Films Grown On Glass And Layered Gase Crystal Substrates By Chemical Bath Deposition, Mevlüt Karabulut, Hüseyi̇n Ertap, Hasan Mammadov, Güventürk Uğurlu, Mustafa Kemal Öztürk
Properties Of Pbs Thin Films Grown On Glass And Layered Gase Crystal Substrates By Chemical Bath Deposition, Mevlüt Karabulut, Hüseyi̇n Ertap, Hasan Mammadov, Güventürk Uğurlu, Mustafa Kemal Öztürk
Turkish Journal of Physics
PbS thin films were grown on glass and GaSe crystal substrates by chemical bath deposition and their structural, morphological, optical, and electrical properties were investigated. PbS films grew in cubic structure with lattice constants equal to 5.9315 Å and 5.9362 Å for films grown on glass and GaSe crystal, respectively. The band gaps of the PbS films were determined to be 1.60 eV. The long wavelength tails of absorption spectra showed exponential dependence on the incident photon energy according to the Urbach-Martiensen model. Electrical properties of PbS films were investigated by the van der Pauw method, which showed that PbS …
Studies On Physical Properties And Carrier Conversion Of Sno_2:Nd Thin Films, Jochan Joseph, Varghese Mathew, Jacob Mathew, K. E. Abraham
Studies On Physical Properties And Carrier Conversion Of Sno_2:Nd Thin Films, Jochan Joseph, Varghese Mathew, Jacob Mathew, K. E. Abraham
Turkish Journal of Physics
Neodymium (Nd)-doped SnO_2 transparent conducting oxide thin films were prepared by vapour deposition technique under different deposition parameters: substrate temperature, time and flow rate of vapour deposition, amount of base material, distance between the substrate and spray gun tip, and dopant (Nd) concentration. The structural, optical, electrical and photo-electronic properties of the doped and undoped SnO_2 films were studied. X-ray diffraction studies shows the polycrystalline nature of the films with preferential orientation along the (101), (211) and (301) planes and an average grain size of 100 Å. The optical properties of these films were studied by measuring their optical transmission …
Electrical Characterization And Relaxation Behavior Of Lithium-Indium-Phosphate Glasses Via Impedance Spectroscopy, M. V. N. V. D. Sharma, A. V. Sarma, R. Balaji Rao
Electrical Characterization And Relaxation Behavior Of Lithium-Indium-Phosphate Glasses Via Impedance Spectroscopy, M. V. N. V. D. Sharma, A. V. Sarma, R. Balaji Rao
Turkish Journal of Physics
Phosphate glasses with various compositions of lithium oxide and indium oxide were synthesized by melt quenching technique. The glass forming ability parameter K_{gl} was characterized by differential thermal analysis. The electrical measurements for all the glass samples were carried out in the frequency range of 10 Hz to 10^{6} Hz and at a temperature range of 393-513 K by the Impedance spectroscopy. Frequency dependent conductivity follows the power law. The ac conductivity increases with temperature following the Arrhenius law. Master curve in the scaling analysis suggesting the temperature independent conduction relaxation mechanism.
Preparation And Study Of The Structural, Optical And Electrical Properties Of Cu(In,Ga)Se_2 Thin Films, Athar Javed
Preparation And Study Of The Structural, Optical And Electrical Properties Of Cu(In,Ga)Se_2 Thin Films, Athar Javed
Turkish Journal of Physics
Thin film samples of Cu(In,Ga)Se_2 (CIGS) were prepared at room temperature by physical vapor deposition (PVD) technique using resistive heating method onto soda lime glass substrates. Deposition conditions were same for all the samples. The prepared samples were annealed in vacuum at temperature of 200 °C for 5, 10, 15, 30 and 60 minutes and were characterized structurally, optically and electrically. The structural analysis indicate the partial formation of quaternary CIGS compounds for the samples which were annealed in vacuum at 200 °C for 30 and 60 minutes. XRD analysis indicate that there is a continuous growth and improvement in …
Structural, Electrical And Spectral Studies On Double Rare-Earth Orthoferrites La_{1-X}Nd_Xfeo_3, O.M. Hemeda, Mohsen Mohamed Barakat, D. M. Hemeda
Structural, Electrical And Spectral Studies On Double Rare-Earth Orthoferrites La_{1-X}Nd_Xfeo_3, O.M. Hemeda, Mohsen Mohamed Barakat, D. M. Hemeda
Turkish Journal of Physics
Samples of double rare-earth ferrite La_{1-x}Nd_xFeO_3 are synthesized by a high-temperature double sintering ceramic technique. X-ray diffraction shows that all compounds have an orthorhombic structure. The values of lattice parameter and the volume of the unit cell, changes with increasing Nd^{3+} content. The Goldschmidt tolerance factor decreases and goes far from unity with increasing Nd content. The samples containing Nd ions with x = 0.1, 0.2 and 0.3 have higher resistivity than that of LaFeO_{3}, but for x \ge 0.4 the resistivity decreases. The results indicate the presence of extrinsic semiconducting properties up to 100 °C above which the hopping …
Characterization Of Spray Deposited Bismuth Oxide Thin Films From Non-Aqueous Medium, V.V. Killedar, C.H. Bhosale, C.D. Lokhande
Characterization Of Spray Deposited Bismuth Oxide Thin Films From Non-Aqueous Medium, V.V. Killedar, C.H. Bhosale, C.D. Lokhande
Turkish Journal of Physics
Bismuth oxide thin films have been prepared on amorphous glass substrates from non-aqueous medium using spray pyrolysis method. Characterization of the films was carried out with XRD, optical absorption, dark resistivity and thermoelectric power (TEP) measurements. These studies reveal that films as deposited are polycrystalline; having an optical band gap of 2.6 eV; electrical resistivity is of the order of $10^6$ ohm-cm; and electron carrier concentration and mobility are of the order of $3.8 \times 10^{19}$cm$^3$ and $1.5 \times 10^{-4}$cm$^2$ V$^{-1}$s$^{-1}$, respectively.