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Frequency And Voltage Dependence Of Electrical Conductivity, Complex Electricmodulus, And Dielectric Properties Of Al/Alq3 /P-Si Structure, İkram Orak, Abdulkeri̇m Karabulut

Turkish Journal of Physics

In order to enhance the capacitance of the Al/p-Si metal-semiconductor structure, the Alq3 thin film was coated between these two layers using the spin coating technique as the interlayer. The electrical conductivity, real and imaginary parts of electric modulus, dielectric loss and dielectric constant parameters were examined at the room temperature by the help of admittance measurements in the 100 kHz to 1 MHz frequency range. The effect of frequency on the dielectric constant and dielectric loss values is negligible at the negative voltage values, up to about 0.8 V, and these values rapidly ascended after 0.8 V. The function …