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Articles 1 - 30 of 64
Full-Text Articles in Physics
Interface Roughness-Induced Intrassubband Scattering In A Quantum Well Under An Electric Field, Guseyn Behbudoglu Ibragimov
Interface Roughness-Induced Intrassubband Scattering In A Quantum Well Under An Electric Field, Guseyn Behbudoglu Ibragimov
Turkish Journal of Physics
The scattering rates in the lowest subband in a quantum well are calculated for interface roughness scattering when an electric field is applied perpendicular to the layer plane. It is found that the interface roughness scattering rate increases with increase in the electric field. The electric field changes the interface roughness scattering rates drastically in thick QWs compared with those for the zero-field case. This behaviour in the scattering rate gives a new degree of freedom in regions of interest in device applications.
Kinetics Of Light-Induced Metastable Defect Creation And Annealing In A-Si:H, Alp Osman Kodolbaş, Aynur Eray, Özcan Öktü
Kinetics Of Light-Induced Metastable Defect Creation And Annealing In A-Si:H, Alp Osman Kodolbaş, Aynur Eray, Özcan Öktü
Turkish Journal of Physics
Constant Photocurrent Method (CPM) and steady state photoconductivity measurements are used to investigate the creation of light-induced metastable defects in a-Si:H at room temperature and their annealing. Light-induced metastable defect concentration N$_{d}$ varies with exposure time t_{e}as t_{e}^{r} with r=0.34\ pm 0.02, as expected from the recombination induced weak bond breaking model [1]. The validity of a stretched exponential model is also studied [2]. From the annealing experiments, the distribution of thermal annealing activation energies is calculated following the method proposed by Hata and Wagner [3]. Defects created at room temperature show a narrow distribution of annealing activation energies peaking …
Filamentation Of Light Emission In An Infrared-Visible Image Converter With A Semiconductor Photodetector, Hi̇lal Yücel Kurt, H. S. Kiymaz, B. G. Salamov, K. Çolakoğlu
Filamentation Of Light Emission In An Infrared-Visible Image Converter With A Semiconductor Photodetector, Hi̇lal Yücel Kurt, H. S. Kiymaz, B. G. Salamov, K. Çolakoğlu
Turkish Journal of Physics
This work studies the light emission patterns associated with the spatial modulation of the transversal distribution of the current density in a converter cell with a GaAs semiconductor cathode. Such light emission exhibits spatial structures of current filaments depending on the feeding voltage, illumination intensity, gas pressure and the surface treatment of the electrodes. When the current is increased above the stable limit, breakdown or small current filamentations begin. However, n-GaAs exhibits an S-shaped current-density-field relation due to impact ionization of carriers from shallow donors into the conduction band under high electric fields. The assessment of the filament formation is …
The B --> S G G Decay In The General Two Higgs Doublet Model, E. O. İltan
The B --> S G G Decay In The General Two Higgs Doublet Model, E. O. İltan
Turkish Journal of Physics
We study the decay width of the inclusive process b --> s g g in the two Higgs doublet model with three-level flavor changing neutral currents (model III). We analyse the dependencies of the differential decay width to the s- quark energy E_s and model III parameters, charged Higgs mass m_H_{^{±}} and Yukawa coupling \bar{\xi}_{N,bb}^D. We observe that there exist a considerable enhancement in the decay width for the relevant process. This enhancement can be reduced by choosing C_7^{eff} as negative or increasing the lower bound of m_H_{^{±}} to the large values. This is an interesting result which gives an …
The Sensitivity Of C\Rightarrow U \Gamma Decay In The Gluino-Axion Model, Müge Boz
The Sensitivity Of C\Rightarrow U \Gamma Decay In The Gluino-Axion Model, Müge Boz
Turkish Journal of Physics
The sensitivity of c\rightarrow u \gamma decay in the recently proposed gluino-axion model is analyzed for a light sbottom in a restricted parameter space. The decay rate enhances up to 3\%$ with respect to the SM result in a moderate range of \tan\beta values.
Schrödinger Quantization And Excited States Of Zitterbewegung, Selahatti̇n Gönen, Ali̇ Havare
Schrödinger Quantization And Excited States Of Zitterbewegung, Selahatti̇n Gönen, Ali̇ Havare
Turkish Journal of Physics
General wavefunction is expanded as power series of a variable which describes internal dynamics of particle, to show that it contains excited states of Schrödinger's Zitterbewegung.
Preparation And Anisotropic Elastic Property Of Bi-Sr-Ca-Cu-O Whiskers, Khaliq A. Chaudhary, M. Arshad Choudhry
Preparation And Anisotropic Elastic Property Of Bi-Sr-Ca-Cu-O Whiskers, Khaliq A. Chaudhary, M. Arshad Choudhry
Turkish Journal of Physics
Flexible and superconducting Bi-Sr-Ca-Cu-O whiskers have been prepared by sintering the melt-quenched glassy powder at 830^oC in oxygen atmosphere. X-ray diffraction and a.c. susceptibility measurements reveal that the whiskers belong to 2212 phase with T_{c} = 79k. The whiskers possess high strength and flexibility along c-axis but were found to be weak and brittle when bent normal to the c-axis. The anisotropic micromechanical elastic property of the whiskers have been demonstrated under a low power optical microscope.
Radial And Nonradial Oscillations Of 63 Her (Hd155514 = Hr6391), Ri̇kkat Ci̇velek, Ni̇lgün Kiziloğlu, Hali̇l Kirbiyik
Radial And Nonradial Oscillations Of 63 Her (Hd155514 = Hr6391), Ri̇kkat Ci̇velek, Ni̇lgün Kiziloğlu, Hali̇l Kirbiyik
Turkish Journal of Physics
An attempt has been made toward explaining the observed frequencies in 63 Her. A sequence of evolutionary models have been calculated up to a point where stellar parameters match the observed luminosity and effective temperature of 63 Her. Radial and nonradial oscillations frequencies were obtained for a series of masses 1.85, 1.90 and 1.95 M_\odot and eigth models which represent best the pulsations of 63 Her are given in this paper. Calculations are restricted to low harmonic degrees ( l= 0,1,2,3 ). Six of the eigth observed frequencies quoted in literature were obtained. These we obtained for the model of …
Tsl-Epr Correlation Study Of Lapo_4 : Ce, Tb, B. S. Chakrabarty, K. V. R. Murthy, T. R. Joshi
Tsl-Epr Correlation Study Of Lapo_4 : Ce, Tb, B. S. Chakrabarty, K. V. R. Murthy, T. R. Joshi
Turkish Journal of Physics
Gamma irradiated TSL glow curves of laboratory made phosphor samples of LaPO_{4}:Ce, Tb exhibited one intense peak around 408 K and two smaller peaks around 508 K and 613 K. The spectrum of the first glow peak gives spectral peaks around 480 nm and 540 nm, which can be attributed to the thermal destruction of F^{++} centres and PO_4^{2-} radicals. The luminescense centre has been thought to be Cerium and Terbium ions. The glow peak around 413 K for UV irradiated samples has been attributed to aggregates of dopant ions. The photoluminescence study of the samples exhibited one intense peak …
Investigation Of The Critical Current Density Of Ybacuo High-Temperature Superconductor Ceramic, Ioseb R. Metskhvarishvili, Nodar P. Kekelidze, Magda R. Metskhvarishvili
Investigation Of The Critical Current Density Of Ybacuo High-Temperature Superconductor Ceramic, Ioseb R. Metskhvarishvili, Nodar P. Kekelidze, Magda R. Metskhvarishvili
Turkish Journal of Physics
The method of high harmonics is used to investigate penetration of low magnetic fields within the Y_{1}Ba_{2}Cu_{3}O_{7} high-temperature superconductor ceramic. Given experimental results are explained by the modal dependencies between the value of critical current density and the magnetic induction B: j_{c}(B) = j_{c}(0){\frac{{B_{0}^{2}}} {{B_{0}^{2} + B^{2}}}}.
Dispersion Analysis Of Sns And Snse, Haluk Şafak, Mustafa Merdan, Ö. Faruk Yüksel
Dispersion Analysis Of Sns And Snse, Haluk Şafak, Mustafa Merdan, Ö. Faruk Yüksel
Turkish Journal of Physics
The reflectance spectra of single crystals of SnS and SnSe were measured at normal incidence by unpolarized light. The refractive indices of speciemens were calculated by Kramers-Kronig Analysis. On the basis of the Wemple diDomenico single oscillator model, the dispersion parameters were determined. It is found that the parameters obtained by unpolarized light are, in general close to those reported for polarized cases. Morever, a close similarity were observed with E//b polarization for SnS.
Free-Carrier Absorption In Quantum Well Structures For Alloy-Disorder Scattering, Guseyn Behbudoglu Ibragimov
Free-Carrier Absorption In Quantum Well Structures For Alloy-Disorder Scattering, Guseyn Behbudoglu Ibragimov
Turkish Journal of Physics
A free-carrier absorption theory is given for quantum wells structures in III-V semiconducting materials, for the case when the carriers a scattered by alloy-disorder. It is found that absorption coefficients due to alloy-disorder and to phonons are of the same order. Results are shown that the absorption coefficient decreases with increasing photon frequency and increases with increasing temperature. It is also shown that the absorption coefficient increases with decreasing layer thickness. We also found that absorption in quantum wells structures is enhanced by going to quantum wells of smaller thickness over its value in the bulk III-V semiconducting materials.
The Effects Of Nonstoichiometry In High - T_C Superconducting Properties Of Yba_2cu_{3 + X}O_{7 - \Delta}, Beniah Ndudim Onwuagba
The Effects Of Nonstoichiometry In High - T_C Superconducting Properties Of Yba_2cu_{3 + X}O_{7 - \Delta}, Beniah Ndudim Onwuagba
Turkish Journal of Physics
Polycrystalline samples of high T_c superconductor YBa_2Cu_{3 + x}O_{7 - \delta} with 0 \leqslant x \leqslant 0.5 were grown. The effects of nonstoichiometry on the resistance slope above transition temperature T_c and X-ray diffraction patterns for these samples were investigated. In the diffraction patterns obtained, apart from some new features in the peaks, these polycrystalline samples show predominantly 123 phase.
Stimulated Polarization In \Bf Linbo_{3} And \Bf Ba_{2}Nanb_{5}O_{15} Crystals, Süleyman Çabuk, Amirullah Mamedov
Stimulated Polarization In \Bf Linbo_{3} And \Bf Ba_{2}Nanb_{5}O_{15} Crystals, Süleyman Çabuk, Amirullah Mamedov
Turkish Journal of Physics
Thermally Stimulated Conductivity (TSC) and thermoelectret state in LiNbO_{3} and Ba_{2}NaNb_{5}O_{15} were measured as a function of temperature and time in dark and under UV excitation at liquid nitrogen temperature. Effect of polarization and the other external influences on thermoelectret were investigated. The thermal activation energy levels of traps were determined from TSC measurements as well as parameters (electric field, temperature, etc.) which are necessary for characterizing thermoelectrets were obtained.
The Ibm-2 Study For Some Even - Even Platinum Isotopes, Mehmet Baylan, Mehmet Altay Atlihan
The Ibm-2 Study For Some Even - Even Platinum Isotopes, Mehmet Baylan, Mehmet Altay Atlihan
Turkish Journal of Physics
The structure of some even -- even Pt isotopes have been studied within the framework of the interacting boson model. The B(E2), B(M1) and Q(I) values of the above nuclei have been calculated. The numerical results obtained for Pt have been compared with the previous experimental and theoretical values obtained on the basis of the interacting boson model (IBA-2).
Justification Of Spherical Approximations Using Degree Of Linear Polarization Of Hot Electron Luminescence From Gaas Crystal, Mohammad Naeem Khalid, Shazia Yasin
Justification Of Spherical Approximations Using Degree Of Linear Polarization Of Hot Electron Luminescence From Gaas Crystal, Mohammad Naeem Khalid, Shazia Yasin
Turkish Journal of Physics
The anisotropic momentum distribution of photoexcited hot electrons on recombination with holes at the acceptor level produces linearly polarized luminescence. It is found that the degree of linear polarization (DoLP) of the luminescence over the whole width of the first heavy hole peak (0HH) is not constant. Calculations within the spherical approximation show that in bulk GaAs the DoLP over the 0HH peak should vary from zero, at the low energy side, to its maximum value (0.33), at the high energy side of the 0HH peak, for the electric vector of excitation \hat {\boldsymbol e}\vert \vert [110] excitation geometry and …
The Single Step Vmhnc Calculations For Liquid Alkali Metals In The Inverse Problem, Serap Şentürk Dalgiç, Seyfetti̇n Dalgiç, Mehmet Tomak
The Single Step Vmhnc Calculations For Liquid Alkali Metals In The Inverse Problem, Serap Şentürk Dalgiç, Seyfetti̇n Dalgiç, Mehmet Tomak
Turkish Journal of Physics
An effective pair potential \phi (r) for liquid alkali metals close totheir melting points is extracted from an experimental structure factor using the inverse method based on the variational modified hypernetted-chain integral equation theory of liquids (VMHNC). The first order pair potential according to the procedure suggested by de Angelis and March is also presented for comparison. It has been found that the inverted pair potentials of liquid alkali metals scale well.
Formation Energy In Al-Mg Alloy By Positron Annihilation Lifetime Technique (Palt), Mamduh Abedl-Rahman, Emad A. Badawi, Essmat Mahmoud Hassan, Gamal Yahya
Formation Energy In Al-Mg Alloy By Positron Annihilation Lifetime Technique (Palt), Mamduh Abedl-Rahman, Emad A. Badawi, Essmat Mahmoud Hassan, Gamal Yahya
Turkish Journal of Physics
The propose of the present work is to study the interaction of positrons with quenched-in defects and clustered atoms to estimate formation enthalpy in series 50xx of commercial Al-Mg alloys, namely, 5049, 5051,5052 and 5083 at various concentrations: 1.9, 2.09, 2.46 and 4.44 wt % of Mg, respectively. Typically additional impurities were mainly Si, Fe, Cu, Cr and Ti. The monvacancy formation energy of Al-Mg alloys was measured from a trapping model analysis of the T-dependence of the positron lifetime.
Defect Structure Of Glow Peak 1 In Lif:Mg,Ti (Tld-100), A. Necmeddi̇n Yazici
Defect Structure Of Glow Peak 1 In Lif:Mg,Ti (Tld-100), A. Necmeddi̇n Yazici
Turkish Journal of Physics
The possible defect structure of peak 1 of LiF:Mg,Ti (TLD-100) was studied in the present work after different pre-irradiation heat treatments between 80°C and 150°C using the computer glow curve deconvolution (CGCD) method. It was shown that the defect structure of peak 1 is based on colloid centers, Ti^{+4}-3O_{2}^{-}-mixed centers and U_{1}-centers.
Measurement Of Photon-Induced K X-Rays Production Cross Sections For Elements With 62 \Le Z \Le 74, Sabri̇ye Seven
Measurement Of Photon-Induced K X-Rays Production Cross Sections For Elements With 62 \Le Z \Le 74, Sabri̇ye Seven
Turkish Journal of Physics
X-ray production cross sections of K\alpha_{1}, K\alpha_{2}, K\beta'_{1} (= K\beta {\ss}_{1} + K\beta_{3} + K\beta_{5}) and K\beta'_{2} (= K\beta_{2} + K\beta_{4} + transitions from higher levels) lines have been measured and theoretically calculated for six elements with 62 \le Z \le 74 at excitation energy of 78.706 keV, the weighted avarage of K conversion x-rays emitted from Bi. The experimental results were compared with theoretically predicted values based on relativistic Hartree-Slater and Hartree-Fock theories, a comparison that was found to be in good agreement to within the experimental uncertainties.
Temperature Dependence Of Galvanomagnetic Properties For Lightly Doped N-Type Si, Aytunç Ateş, Beki̇r Gürbulak, Seydi̇ Doğan, Muhammet Yildirim, Sebahatti̇n Tüzemen
Temperature Dependence Of Galvanomagnetic Properties For Lightly Doped N-Type Si, Aytunç Ateş, Beki̇r Gürbulak, Seydi̇ Doğan, Muhammet Yildirim, Sebahatti̇n Tüzemen
Turkish Journal of Physics
The temperature dependence of Hall and magnetoresistance effects in n-type Si having a resistivity of 1400 {\Omega } cm at room temperature is studied in the temperature range of 210-320 K. The variation of transverse magnetoresistance as a function of temperature is similar to the longitudinal magnetoresistance variation in < 001 > and < 1\bar {1}0 > n-Si the samples. It is observed that, in < 001 > sample, the transverse and longitudinal magnetoresistance variation is greater than that in the < 1\bar {1}0 > sample. In both samples, the temperature dependences of magnetoresistance is in accordance to double space anisotropy parameters. In both samples, the transverse and longitudinal magnetoresistance coefficents increase with increasing …
Micro-Crystallographic, Optical And Transport Studies Of Cd_{0.7} Zn_{0.3} Se : Sb Thin Films, D. S. Sutrave, G. S. Shahane, V. B. Patil, L. P. Deshmukh, B. D. Sarwade
Micro-Crystallographic, Optical And Transport Studies Of Cd_{0.7} Zn_{0.3} Se : Sb Thin Films, D. S. Sutrave, G. S. Shahane, V. B. Patil, L. P. Deshmukh, B. D. Sarwade
Turkish Journal of Physics
Cd_{1-x}Zn_{x}Se thin film structures doped with various concentrations of trivalent antimony were chemically deposited onto glass-substrates. These structures were then characterised through the XRD, SEM, optical and electrical characterization techniques. The X-ray diffractograms of both as-prepared and Sb-doped samples were obtained and analysed. The analysis revealed that the samples are microcrystalline over the whole range of the doping concentration (0 to 2 mol %). It is striking that the intensities of hexagonal and cubic reflections of CdSe went on increasing with doping concentration upto 0.1 mol % and decreased with further increase in Sb^{3+} content in the film whereas peak …
Effect Of The Zn Concentration On The Characteristic Parameters Of Zn_{X}Cd_{1 - X}S Thin Films Developed By Spraying Pyrolysis Method Under The Nitrogen Atmosphere, Meti̇n Bedi̇r, Refi̇k Kayali, Mustafa Öztaş
Effect Of The Zn Concentration On The Characteristic Parameters Of Zn_{X}Cd_{1 - X}S Thin Films Developed By Spraying Pyrolysis Method Under The Nitrogen Atmosphere, Meti̇n Bedi̇r, Refi̇k Kayali, Mustafa Öztaş
Turkish Journal of Physics
The electronic and optical properties of Zn_{x}Cd _{(1- x)}S thin films (0.0 \le x \le 0.7) fabricated using the chemical spray method have been investigated in nitrogen atmosphere. The films are deposited on glass substrates at 420^oC substrate temperature. The related optical data are recorded in the wavelength range 200-700 nm. In addition, the absorption coefficient is determined and correlated with the photon energy in order to estimate the direct transition energy bandgap. The crystallite size and degree of preferential orientation were found to decrease with the increase of x and to improve upon annealing in vacuum at \cong 600^oC. …
Spatial Non-Uniformity Measurements Of Large Area Silicon Photodiodes, Murat Durak, Farhad Samadov, A. Kamuran Türkoğlu
Spatial Non-Uniformity Measurements Of Large Area Silicon Photodiodes, Murat Durak, Farhad Samadov, A. Kamuran Türkoğlu
Turkish Journal of Physics
Accurate determination of the responsivity of silicon photodiodes are highly desired in photometry. The change of responsivity over the surface, the so-called spatial non-uniformity, effects power measurements especially in photodiodes with large active areas. To study this effect, first an intensity-stabilized laser source-optics has been established. A purpose-built step-motor controlled two axis micro mechanical stage has been designed to scan the photodiode surface. In this study, the technique and the results of the uniformity mapping of large area research-grade silicon photodiodes which were measured on the purpose-built set-up are presented.
Some Characteristic Properties, Vithal Bhivaba Pujari, V. B. Gaikwad, E. U. Masumdar, P. D. More, L. P. Deshmukh
Some Characteristic Properties, Vithal Bhivaba Pujari, V. B. Gaikwad, E. U. Masumdar, P. D. More, L. P. Deshmukh
Turkish Journal of Physics
This paper presents some information regarding (Cd, Hg) Se materials synthesized by a simple chemical growth process and the structural, optical and electrical transport properties. The growth of these films depends on various preparative parameters and deposition conditions such as concentration of the starting materials, pH, temperature, time, speed of mechanical churning, etc., and the reaction kinetics suggests that the films grow into two different phases: one, initialy an almost linear phase; and second, a saturation phase. The deposits were analysed chemically and by an EDS techniques. It has been seen that more than 70% of the materials taken in …
Monitoring The Effect Of Recrystallization And Quenching In Almg_{X} Alloy By Pat, A. Ashour, Nour Zaki El-Said, Emad A. Badawi
Monitoring The Effect Of Recrystallization And Quenching In Almg_{X} Alloy By Pat, A. Ashour, Nour Zaki El-Said, Emad A. Badawi
Turkish Journal of Physics
Positron annihilation technique (PAT) lifetime measurements have been carried out on AlMg_{x} samples (x = 0.23, 0.85, 1.27 and 1.4 at %) with point defects and dislocations introduced by plastic deformation at room temperature. Clustering of vacancies was observed by quenching using PAT. The samples were annealed at 573 K for 12 hours to homogenize and divided into two sets. The first set of AlMg_{x} (x = 0.23, 0.85 and 1.4 at %) was deformed to 10, 25 and 35% thickness reduction. Isochronal annealing was studied in the range of 300-550 K. In the second set of measurements, AlMg_{x} (x …
Off-Diagonal Matrix Elements And Sum Rules Involving Coulomb And Isotropic Oscillator Functions, Harry A. Mavromatis
Off-Diagonal Matrix Elements And Sum Rules Involving Coulomb And Isotropic Oscillator Functions, Harry A. Mavromatis
Turkish Journal of Physics
Off-diagonal matrix elements and sum rules for the Coulomb and isotropic oscillator systems are obtained from a study of relations between the off-diagonal matrix elements of a general recursion relation.
Effect Of Rf Power On The Electrical Properties Of Glow-Discharge A-Si:H, Hüseyi̇n Tolunay
Effect Of Rf Power On The Electrical Properties Of Glow-Discharge A-Si:H, Hüseyi̇n Tolunay
Turkish Journal of Physics
Hydrogenated amorphous silicon films were prepared in an rf glow-discharge system by decomposing undiluted silane at various rf power densities. Dark conductivity and photoconductivity of the films have been measured in the temperature range 420K-100K at four different photon fluxes. It was observed that both dark conductivity and photoconductivity increase with increasing rf power density.
Near Bandedge Optical Absorption Processes In Semi Insulating And N-Type Gaas, Tacetti̇n Yildirim, Sebahatti̇n Tüzemen, Seydi̇ Doğan, Beki̇r Gürbulak, Aytunç Ateş, Muhammet Yildirim
Near Bandedge Optical Absorption Processes In Semi Insulating And N-Type Gaas, Tacetti̇n Yildirim, Sebahatti̇n Tüzemen, Seydi̇ Doğan, Beki̇r Gürbulak, Aytunç Ateş, Muhammet Yildirim
Turkish Journal of Physics
Near bandedge optical absorption processes in semi-insulating (SI) GaAs and Te-doped n-type GaAs crystals were investigated in the temperature range 10--300 K. We observed absorption peaks whose maximum energies E_{m}, ranging from 1.498 to 1.485 eV decrease as the temperature increases from 10 K to 100 K. The peaks for both SI and n-type GaAs disappeared above 100 K. Extrapolating the graphs of E$_{g}-E_{m} versus temperature, we observed that near bandedge absorption is overlapped by the conduction band at about 220 K and 260 K for n-type and SI samples, respectively. Furthermore, we demonstrated that the absorption in the region …
Experimental Investigation Of Temperature Effect On Refractive Index Of Dye Laser Liquids, Şeref Yaltkaya, Ramazan Aydin
Experimental Investigation Of Temperature Effect On Refractive Index Of Dye Laser Liquids, Şeref Yaltkaya, Ramazan Aydin
Turkish Journal of Physics
In this work, refractive index of selected dye laser solutions were measured by fiber optic sensor. The fiber optic probe was dipped into the liquids and according to Fresnel's Reflection Law, refractive index values were obtained at the wavelength of the laser utilized. The solutions consisted of Rhodamine 6G, Rhodamine B and Coumarin 481 dissolved in methanol, and ethylene glycol, respectively. Refractive index variations of the dye solutions and their solvents with temperature were measured and the refractive index temperature coefficient dn/dT were calculated at the wavelength of 780 nm.