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Infrared Charge-Modulation Spectroscopy Of Defects In Phosphorus Doped Amorphous Silicon, Kai Zhu, Eric A. Schiff, G. Ganguly
Infrared Charge-Modulation Spectroscopy Of Defects In Phosphorus Doped Amorphous Silicon, Kai Zhu, Eric A. Schiff, G. Ganguly
Physics - All Scholarship
We present infrared charge-modulation absorption spectra on phosphorus-doped amorphous silicon (a-Si:H:P) with doping levels between 0.17% - 5%. At higher doping levels (1% - 5%) we find a sharp spectral line near 0.75 eV with a width of 0.1 eV. We attribute this line to the internal optical transitions of a complex incorporating four fold coordinated phosphorus and a dangling bond. This line is barely detectable in samples with lower doping levels (below 1%). In these samples a much broader line dominates the spectrum that we attribute to uncomplexed dopants. The relative strength of the two spectral features is in …
Thermionic Emission Model For Interface Effects On The Open-Circuit Voltage Of Amorphous Silicon Based Solar Cells, Eric A. Schiff
Thermionic Emission Model For Interface Effects On The Open-Circuit Voltage Of Amorphous Silicon Based Solar Cells, Eric A. Schiff
Physics - All Scholarship
We present computer modeling for effects of the p/i interface upon the open-circuit voltage VOC in amorphous silicon based pin solar cells. We show that the modeling is consistent with measurements on the intensitydependence for the interface effect, and we present an interpretation for the modeling based on thermionic emission of electrons over the electrostatic barrier at the p/i interface. We present additional modeling of the relation of VOC with the intrinsic layer bandgap EG. The experimental correlation for optimized cells is VOC = (EG/e)-0.79. The correlation is simply explained if VOC in these cells is determined by the intrinsic …