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Full-Text Articles in Physics
Two-Dimensional Electron Gases At The Surface Of Potassium Tantalate, Ben Pound
Two-Dimensional Electron Gases At The Surface Of Potassium Tantalate, Ben Pound
Ben Pound
No abstract provided.
Investigation Of Carrier Transit Motion In Pcdtbt By Optical Shg Technique, Shahino Mah Abdullah
Investigation Of Carrier Transit Motion In Pcdtbt By Optical Shg Technique, Shahino Mah Abdullah
Shahino Mah Abdullah
We analyze the carrier transit behavior in poly[N-9'-heptadecanyl-2,7-carbazole-alt-5,5-(4',7'-di-2-thienyl-2',1',3'-benzothiadiazole)] (PCDTBT), which has been reported as a donor material for efficient bulk hetero junction photovolatic devices. The transfer and transient carrier mobilities in the PCDTBT thin films have been measured and analyzed. The transfer mobility has been measured by the transfer curve of the OFET, whereas, the transient mobility is recorded using a time-resolved electric-field-induced optical second-harmonic-generation (TRM-SHG) technique. Using TRM-SHG technique, the dynamic motion of the charge carriers in the PCDTBT thin films has been directly visualized. We anticipate that the analysis of the carrier motion by TRM-SHG, will be effective …
Investigation Of Charge Transport In Organic Polymer Donor/Acceptor Photovolatic Materials, Zubair Ahmad, Shahino Mah Abdullah, Khaulah Sulaiman
Investigation Of Charge Transport In Organic Polymer Donor/Acceptor Photovolatic Materials, Zubair Ahmad, Shahino Mah Abdullah, Khaulah Sulaiman
Zubair Ahmad
Pi-conjugated organic semiconductors have long been used as either holes or electrons transport materials. Recently ambipolar charge carrier transport in these materials have been reported in many investigations. In this paper, we report on the basis of experimental results that the organic semiconductor (donor/acceptor) materials can be as good electrons transporters as these materials are holes transporters. In our study, the solution-processed unipolar diodes based on organic materials P3HT, VOPCPhO and their blends with PCBM have been fabricated. The I-V characteristics of these diodes have been analyzed in the space charge limited current regime. The values of the electron and …
Effects Of Bandgap On Secondary Electron Emission For Graphitic Carbon Semiconductiors, Jodie Gillespie, Jr Dennison
Effects Of Bandgap On Secondary Electron Emission For Graphitic Carbon Semiconductiors, Jodie Gillespie, Jr Dennison
Jodie Corbridge Gillespie
Preliminary data indicates a relationship between bandgap width and magnitude of secondary electron (SE) yield. Our work extends this research to investigate the correlation of small bandgap width to SE yield. These trends are compared with current semiempirical models of two limiting cases, conductors and large bandgap semiconductors. Specifically, five graphitic amorphous carbon (g-C) samples of decreasing bandgap width were produced by vacuum annealing from 0C-1050C. Preliminary data shows a 30of g-C above nanocrystalline graphite. Measurements include SE yields, backscattered yields and electron emission spectra, as well as characterization with SEM, photoyields, AES, resistivity, and Raman spectroscopy. SE yields were …
Heat Transport In Sb2àXvxte3 Single Crystals, Jeffrey Dyck, W. Chen, C. Uher, Č. DrašAr, P. LošŤÁK
Heat Transport In Sb2àXvxte3 Single Crystals, Jeffrey Dyck, W. Chen, C. Uher, Č. DrašAr, P. LošŤÁK
Jeffrey Dyck
Antimony telluride doped with small concentrations of vanadium was recently identified as a diluted magnetic semiconductor. We present a study of the heat transport in single crystals of [formula] with [formula] 0.01, 0.02, and 0.03. Thermopower and thermal conductivity were measured from 1.5 K to 300 K. The thermopower is positive for all samples investigated and has a modest dependence on vanadium content. At low temperatures, the lattice thermal conductivity has an approximate [formula] dependence and the data up to 100 K can be fitted well assuming that phonons scatter on boundaries, point defects, charge carriers, and other phonons. Theoretical …
Transport Properties Of Polycrystalline Type-I Sn Clathrates, G. S. Nolas, J. L. Cohn, Jeffrey Dyck, C. Uher, J. Lang
Transport Properties Of Polycrystalline Type-I Sn Clathrates, G. S. Nolas, J. L. Cohn, Jeffrey Dyck, C. Uher, J. Lang
Jeffrey Dyck
Thermal conductivity, resistivity, Seebeck coefficient, and Hall measurements on polycrystalline Sn-clathrate compounds with the type-I hydrate crystal structure are reported. Interstitial alkali-metal atoms in these compounds reside inside polyhedral cavities formed by the tetrahedrally bonded Sn network atoms. Localized disorder associated with “rattling” motion of these interstitial atoms contributes to the low thermal conductivity of these semiconducting compounds. The Hall coefficient and resistivity for some compounds exhibit nonmonotonic temperature dependences consistent with a crossover with decreasing temperature from conduction-band to impurity-band conduction. The carrier mobility is found to be low even in the absence of interstitial atoms within the Sn …
Diluted Magnetic Semiconductors Based On Sb2àXvxte3 „0.01ïXï0.03., Jeffrey Dyck, Pavel Hájek, Petr LošŤÁK, Ctirad Uher
Diluted Magnetic Semiconductors Based On Sb2àXvxte3 „0.01ïXï0.03., Jeffrey Dyck, Pavel Hájek, Petr LošŤÁK, Ctirad Uher
Jeffrey Dyck
We report on a diluted magnetic semiconductor based on the [formula] tetradymite structure doped with very low concentrations of vanadium (1—3 at. %). The anomalous transport behavior and robust magnetic hysteresis loops observed in magnetotransport and magnetic measurements are experimental manifestations of the ferromagnetic state in these materials. The [formula] exchange between holes and vanadium [formula] spins is estimated from the behavior of the magnetoresistance. A Curie temperature of at least 22 K is observed for [formula] This discovery offers possibilities for exploring magnetic properties of other tetradymite structure semiconductors doped with a wide range of [formula] transition metals.
Effect Of Ni On The Transport And Magnetic Properties Of Co1àXnixsb3, Jeffrey Dyck, Wei Chen, Jihui Yang, Gregory P. Meisner, Ctirad Uher
Effect Of Ni On The Transport And Magnetic Properties Of Co1àXnixsb3, Jeffrey Dyck, Wei Chen, Jihui Yang, Gregory P. Meisner, Ctirad Uher
Jeffrey Dyck
The filled skutterudite compounds based on the binary skutterudite [formula] are currently being investigated for their potential applications as thermoelectric materials. One route to optimization of these compounds is by doping on the Co site. An obvious candidate for an n-type dopant is Ni, since it has one more electron in its valence shell than Co. Up to now, however, only high concentrations of Ni in [formula] have been studied; and the valence of Ni in this compound and its influence on the transport and magnetic properties has been an open question. We present electrical resistivity, thermopower, Hall effect, magnetoresistance, …
Low-Temperature Ferromagnetism And Magnetic Anisotropy In The Novel Diluted Magnetic Semiconductor Sb2−Xvxte3, Jeffrey Dyck, Wei Chen, Pavel Hájek, Petr Lošt’Ák, Ctirad Uher
Low-Temperature Ferromagnetism And Magnetic Anisotropy In The Novel Diluted Magnetic Semiconductor Sb2−Xvxte3, Jeffrey Dyck, Wei Chen, Pavel Hájek, Petr Lošt’Ák, Ctirad Uher
Jeffrey Dyck
We report on a novel diluted magnetic semiconductor based on the Sb2Te3 tetradymite structure doped with very low concentrations of vanadium (1–3at%). Anisotropy in the magnetic hysteresis loops and magnetoresistance are observed at temperatures below the ferromagnetic ordering temperature. A Curie temperature of 24K is observed for Sb1.97V0.03Te3.
Electron Beam Effects In The Analysis Of Compound Semiconductors And Devices, Nancy Burnham, Ll Kazmerski, Ab Swartzlander, Aj Nelson, Se Asher
Electron Beam Effects In The Analysis Of Compound Semiconductors And Devices, Nancy Burnham, Ll Kazmerski, Ab Swartzlander, Aj Nelson, Se Asher
Nancy A. Burnham
The effects of electron beams on the analysis of CuInSe2surfaces are examined in this paper. Potential changes in the surface chemistry—including oxidation and desorption—under a range of incident probe conditions, are investigated for possible artifactual information generation. Emphasis is placed on the relationships between beam conditions and oxygen chemisorption and physisorption, since oxygen treatments of devices utilizing this semiconductor are critical to performance. Single crystals and polycrystalline thin films are analyzed and compared to establish the beam‐induced phenomena.
Imaging Of Paramagnetic Centres In Diamond, M.J. R. Hoch, Anthony Roy Day
Imaging Of Paramagnetic Centres In Diamond, M.J. R. Hoch, Anthony Roy Day
Anthony Roy Day
An imaging method for determining the spatial distribution of paramagnetic nitrogen centres in diamond is described. Results are presented for a sample consisting of two small type IB diamonds.