Open Access. Powered by Scholars. Published by Universities.®
- Discipline
Articles 1 - 3 of 3
Full-Text Articles in Physics
Supersymmetry And The Tunneling Problem In An Asymmetric Double Well, Asim Gangopadhyaya, Prasanta Panigrahi, Uday Sukhatne
Supersymmetry And The Tunneling Problem In An Asymmetric Double Well, Asim Gangopadhyaya, Prasanta Panigrahi, Uday Sukhatne
Asim Gangopadhyaya
The techniques of supersymmetric quantum mechanics are applied to the calculation of the energy difference between the ground state and the first excited state of an asymmetric double well. This splitting, originating from the tunneling effect, is computed via a systematic, rapidly converging perturbation expansion. Perturbative calculations to any order can be easily carried out using a logarithmic perturbation theory. Our approach yield substantially better results than alternative widely used semiclassical analyses.
Neutron Interferometric Method To Provide Improved Constraints On Non-Newtonian Gravity At The Nanometer Scale, Geoffrey Greene, Vladimir Gudkov
Neutron Interferometric Method To Provide Improved Constraints On Non-Newtonian Gravity At The Nanometer Scale, Geoffrey Greene, Vladimir Gudkov
Geoffrey Greene
In recent years, an energetic experimental program has set quite stringent limits on a possible “non-1/r2” dependence on gravity at short length scales. This effort has been largely driven by the predictions of theories based on compactification of extra spatial dimensions. It is characteristic of many such theories that the strength and length scales of such anomalous gravity are not clearly determined from first principles. As a result, it is productive to extend the current limits the range and strength of such hypothetical interactions. As a heavy, neutral, and (almost) stable particle, the neutron provides an ideal probe for the …
Adaptive Circuits Using Pfet Floating-Gate Devices, Paul Hasler, Bradley Minch, Chris Diorio
Adaptive Circuits Using Pfet Floating-Gate Devices, Paul Hasler, Bradley Minch, Chris Diorio
Bradley Minch
In this paper, we describe our floating-gate pFET device, with its many circuit applications and supporting experimental measurements. We developed these devices in standard double-poly CMOS technologies by utilizing many effects inherent in these processes. We add floating-gate charge by electron tunneling, and we remove floating-gate charge by hot-electron injection. With this floating-gate technology, we cannot only build analog EEPROMs, we can also implement adaptation and learning when we consider floating-gate devices to be circuit elements with important time-domain dynamics. We start by discussing non-adaptive properties of floating-gate devices and we present two representative non-adaptive applications. First, we discuss using …