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Removal Versus Ablation In Krf Dry Laser Cleaning Of Polystyrene Particles From Silicon, Sergey I. Kudryashov, Susan D. Allen

Susan D. Allen

Direct absorption and melting of 0.2, 0.5 and 1.1 μm polystyrene particles on a Si substrate irradiated by 248 nm excimer laser radiation was found to contribute to their dry laser removal via a "hopping" mechanism at cleaning thresholds of 0.05, 0.1, and 0.16 J/cm ², respectively. Ablation of these particles, which starts near the beginning of substrate deceleration at fluences above 0.4-0.5 J/cm ², suppresses particle removal due to ablative recoil momentum. At fluences above a second cleaning threshold of 0.7 J/cm ² particles are completely evaporated without any visible surface damage of the Si substrate.

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