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Substantial Pressure Effect On The Resistivity And Curie Temperature For The Diluted Magnetic Semiconductor Sb2–X Vx Te3., Jeffrey Dyck, K. Ahilan, M. Aronson, C. Uher, P. Lošťák
Substantial Pressure Effect On The Resistivity And Curie Temperature For The Diluted Magnetic Semiconductor Sb2–X Vx Te3., Jeffrey Dyck, K. Ahilan, M. Aronson, C. Uher, P. Lošťák
Jeffrey Dyck
The influence of hydrostatic pressure on the electrical resistivity ρ and ferromagnetic transition temperature T C of bulk, single crystal Sb1–x Vx Te3 with x = 0.03 is presented. Pressure strongly suppresses ρ at all temperatures, with an overall decrease of about 35% at 1.6 GPa. The peak in ρ , a signature of T C, moves to lower temperature with increasing pressure. An overall suppression of T C near 40% at 1.6 GPa is observed. The results are discussed within the context of a carrier-mediated ferromagnetic exchange interaction.