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Full-Text Articles in Physics
Toward High-Performance Nanostructured Thermoelectric Materials: The Progress Of Bottom-Up Solution Chemistry Approaches, Yixin Zhao, Jeffrey S. Dyck, Clemens Burda
Toward High-Performance Nanostructured Thermoelectric Materials: The Progress Of Bottom-Up Solution Chemistry Approaches, Yixin Zhao, Jeffrey S. Dyck, Clemens Burda
Jeffrey Dyck
Significant research effort has recently gone into the synthesis of thermoelectric nanomaterials through different chemical approaches since nanomaterials chemistry became a promising strategy for improving thermoelectric performance. Different thermoelectric nanocrystals, especially PbTe, Bi2Te3 and CoSb3, with various compositions and morphologies have been successfully prepared by solvo/hydrothermal, electrochemical, and ligand-based synthesis methods. Such nanoscale materials show not only substantial reduction in thermal conductivity due to increased phonon scattering at nanoscale grain boundaries and lower densities of phonon states but possibly also an enhancement in thermopower due to electronic quantum size effects. More recently, the notoriously low power factors of thermoelectric nanomaterials …
Structure Inhomogeneities, Shallow Defects, And Charge Transport In The Series Of Thermoelectric Materials K2bi8−Xsbxse13, Jeffrey S. Dyck, T. Kyratski, E. Hatzikraniotis, K. M. Paraskevopoulos, C. D. Malliakas, C. Uher, M. G. Kanatzidis
Structure Inhomogeneities, Shallow Defects, And Charge Transport In The Series Of Thermoelectric Materials K2bi8−Xsbxse13, Jeffrey S. Dyck, T. Kyratski, E. Hatzikraniotis, K. M. Paraskevopoulos, C. D. Malliakas, C. Uher, M. G. Kanatzidis
Jeffrey Dyck
The charge transport properties of the low-dimensional thermoelectric materials K2Bi8-xSbxSe13 (02Bi8-xSbxSe13 was analyzed on the basis of the classical semiconductor theory and discussed in the context of recent band calculations. The results suggest that the K2Bi8-xSbxSe13 materials possess coexisting domains with semimetallic and semiconducting characters whose ratio is influenced by the value of x and by local defects. The extent and relative distribution of these domains control the charge transport properties. Electron diffraction experiments performed on samples of K2Bi8-xSbxSe13 with x=1.6 show evidence for such domains by indicating regions with long range ordering of K+/Bi3+ atoms and regions with increased …
Defect Structure Of Sb2−Xcrxte3 Single Crystals, Jeffrey Dyck, J. HoráK, P. C. Quayle, Č. DrašAr, P. LošT’ÁK, C. Uher
Defect Structure Of Sb2−Xcrxte3 Single Crystals, Jeffrey Dyck, J. HoráK, P. C. Quayle, Č. DrašAr, P. LošT’ÁK, C. Uher
Jeffrey Dyck
Single crystals of Sb2Te3 doped with Cr (cCr=0–6×1020 cm-3) were prepared by the Bridgman method. The measurements of the Hall coefficient reveal a nonmonotonous dependence of hole concentrations on the Cr content in the crystal. The hole concentration decreases at low content of Cr, while at higher content of Cr it increases again. However, according to magnetic measurements, Cr atoms enter the structure and form uncharged substitutional defects CrSb×, which cannot affect the free carrier concentration directly. The observed dependence can be elucidated by means of a point defect model. The model is based on an assumption that defect structure …
Significant Suppression Of Ferromagnetism By Hydrostatic Pressure In The Diluted Magnetic Semiconductor Sb2-Xvxte3 With X <~ 0.03, Jeffrey Dyck, T J. Mitchell, A J. Luciana, P C. Quayle, C DrašAr, P LošŤÁK
Significant Suppression Of Ferromagnetism By Hydrostatic Pressure In The Diluted Magnetic Semiconductor Sb2-Xvxte3 With X <~ 0.03, Jeffrey Dyck, T J. Mitchell, A J. Luciana, P C. Quayle, C DrašAr, P LošŤÁK
Jeffrey Dyck
The authors report on the hydrostatic pressure dependence of the magnetotransport properties of ferromagnetic Sb2-xVxTe3 single crystals with x=0.02—0.03. Pressure significantly increases the free hole concentration in these compounds. In turn, the Curie temperature is suppressed by roughly 40%, which goes against many models that would predict an increase in Curie temperature with increasing carrier concentration. These results indicate that the ferromagnetism in these materials is carrier mediated and that a full Ruderman-Kittel-Kasuya-Yosida model that takes into account the oscillatory nature of the indirect exchange interaction among localized spins is needed in order to explain the data.
Lattice Thermal Conductivity Of K2(Bi1_Zsbz)8se13 Solid Solutions, Jeffrey S. Dyck, Theodora Kyratsi, Evripides Hatzikraniotis, M Paraskevopoulous, H. K. Shin, Ctirad Uher, Mercouri Kanatzidis
Lattice Thermal Conductivity Of K2(Bi1_Zsbz)8se13 Solid Solutions, Jeffrey S. Dyck, Theodora Kyratsi, Evripides Hatzikraniotis, M Paraskevopoulous, H. K. Shin, Ctirad Uher, Mercouri Kanatzidis
Jeffrey Dyck
The family of solid solutions of the type B -K2(Bi1_zSbz)8Se13 (0
Magnetic And Transport Properties Of The V2– Vi3 Diluted Magnetic Semiconductor Sb2_Xmnxte3, Jeffrey Dyck, P. Svanda, P. Lostak, J. Horak, W. Chen, C. Uher
Magnetic And Transport Properties Of The V2– Vi3 Diluted Magnetic Semiconductor Sb2_Xmnxte3, Jeffrey Dyck, P. Svanda, P. Lostak, J. Horak, W. Chen, C. Uher
Jeffrey Dyck
We have measured electrical and magnetic properties of single crystals of Sb2_xMnxTe3 with x =0 – 0.045 at temperatures of 2 K to 300 K. Hall effect measurements indicate that each manganese atom donates approximately one hole to the valence band. The magnetic susceptibility is paramagnetic down to 2 K, and both Curie–Weiss and Brillouin analyses show that manganese substitutes for Sb and takes the Mn2+ state with S=5/2. Contrary to the case of III–V host matrices, manganese does not stimulate ferromagnetic order in the family of bulk layered V2– VI3 diluted magnetic semiconductors, at least in the range of …
Heat Transport In Sb2àXvxte3 Single Crystals, Jeffrey Dyck, W. Chen, C. Uher, Č. DrašAr, P. LošŤÁK
Heat Transport In Sb2àXvxte3 Single Crystals, Jeffrey Dyck, W. Chen, C. Uher, Č. DrašAr, P. LošŤÁK
Jeffrey Dyck
Antimony telluride doped with small concentrations of vanadium was recently identified as a diluted magnetic semiconductor. We present a study of the heat transport in single crystals of [formula] with [formula] 0.01, 0.02, and 0.03. Thermopower and thermal conductivity were measured from 1.5 K to 300 K. The thermopower is positive for all samples investigated and has a modest dependence on vanadium content. At low temperatures, the lattice thermal conductivity has an approximate [formula] dependence and the data up to 100 K can be fitted well assuming that phonons scatter on boundaries, point defects, charge carriers, and other phonons. Theoretical …
Highly Anisotropic Crystal Growth And Thermoelectric Properties Of K2bi8_Xsbxse13 Solid Solutions: Band Gap Anomaly At Low X, Jeffrey S. Dyck, Theodora Kyratsi, Wei Chan, Duck-Young Chung, Ctirad Uher, Konstantinos Paraskevopoulos, Mercouri Kanatzidis
Highly Anisotropic Crystal Growth And Thermoelectric Properties Of K2bi8_Xsbxse13 Solid Solutions: Band Gap Anomaly At Low X, Jeffrey S. Dyck, Theodora Kyratsi, Wei Chan, Duck-Young Chung, Ctirad Uher, Konstantinos Paraskevopoulos, Mercouri Kanatzidis
Jeffrey Dyck
The thermoelectric properties of solid solutions of the type B -K2Bi8_xSbxSe13 (0
Transport Properties Of Polycrystalline Type-I Sn Clathrates, G. S. Nolas, J. L. Cohn, Jeffrey Dyck, C. Uher, J. Lang
Transport Properties Of Polycrystalline Type-I Sn Clathrates, G. S. Nolas, J. L. Cohn, Jeffrey Dyck, C. Uher, J. Lang
Jeffrey Dyck
Thermal conductivity, resistivity, Seebeck coefficient, and Hall measurements on polycrystalline Sn-clathrate compounds with the type-I hydrate crystal structure are reported. Interstitial alkali-metal atoms in these compounds reside inside polyhedral cavities formed by the tetrahedrally bonded Sn network atoms. Localized disorder associated with “rattling” motion of these interstitial atoms contributes to the low thermal conductivity of these semiconducting compounds. The Hall coefficient and resistivity for some compounds exhibit nonmonotonic temperature dependences consistent with a crossover with decreasing temperature from conduction-band to impurity-band conduction. The carrier mobility is found to be low even in the absence of interstitial atoms within the Sn …
Thermoelectric Properties Of The N-Type Filled Skutterudite Ba0.3co4sb12 Doped With Ni, Jeffrey Dyck, Wei Chen, Ctirad Uher, Lidong Chen, Xinfeng Tang, Toshio Hirai
Thermoelectric Properties Of The N-Type Filled Skutterudite Ba0.3co4sb12 Doped With Ni, Jeffrey Dyck, Wei Chen, Ctirad Uher, Lidong Chen, Xinfeng Tang, Toshio Hirai
Jeffrey Dyck
Synthesis and electrical and thermal transport properties are reported for several filled skutterudite compounds doped with Ni: Ba0.3NixCo4_xSb12 with 0
Diluted Magnetic Semiconductors Based On Sb2àXvxte3 „0.01ïXï0.03., Jeffrey Dyck, Pavel Hájek, Petr LošŤÁK, Ctirad Uher
Diluted Magnetic Semiconductors Based On Sb2àXvxte3 „0.01ïXï0.03., Jeffrey Dyck, Pavel Hájek, Petr LošŤÁK, Ctirad Uher
Jeffrey Dyck
We report on a diluted magnetic semiconductor based on the [formula] tetradymite structure doped with very low concentrations of vanadium (1—3 at. %). The anomalous transport behavior and robust magnetic hysteresis loops observed in magnetotransport and magnetic measurements are experimental manifestations of the ferromagnetic state in these materials. The [formula] exchange between holes and vanadium [formula] spins is estimated from the behavior of the magnetoresistance. A Curie temperature of at least 22 K is observed for [formula] This discovery offers possibilities for exploring magnetic properties of other tetradymite structure semiconductors doped with a wide range of [formula] transition metals.
Effect Of Ni On The Transport And Magnetic Properties Of Co1àXnixsb3, Jeffrey Dyck, Wei Chen, Jihui Yang, Gregory P. Meisner, Ctirad Uher
Effect Of Ni On The Transport And Magnetic Properties Of Co1àXnixsb3, Jeffrey Dyck, Wei Chen, Jihui Yang, Gregory P. Meisner, Ctirad Uher
Jeffrey Dyck
The filled skutterudite compounds based on the binary skutterudite [formula] are currently being investigated for their potential applications as thermoelectric materials. One route to optimization of these compounds is by doping on the Co site. An obvious candidate for an n-type dopant is Ni, since it has one more electron in its valence shell than Co. Up to now, however, only high concentrations of Ni in [formula] have been studied; and the valence of Ni in this compound and its influence on the transport and magnetic properties has been an open question. We present electrical resistivity, thermopower, Hall effect, magnetoresistance, …
Influence Of Electron-Phonon Interaction On The Lattice Thermal Conductivity Of Co1àXnixsb3, J. Yang, D. T. Morelli, G. P. Meisner, W. Chen, Jeffrey Dyck, C. Uher
Influence Of Electron-Phonon Interaction On The Lattice Thermal Conductivity Of Co1àXnixsb3, J. Yang, D. T. Morelli, G. P. Meisner, W. Chen, Jeffrey Dyck, C. Uher
Jeffrey Dyck
We have investigated the effect of electron-phonon scattering in a series of n-type nickel-doped [formula] skutterudite materials. Samples were polycrystalline of the form [formula] with [formula] 0.001, 0.003, 0.005, 0.0075, and 0.01. The lattice thermal conductivity decreases dramatically with increasing Ni doping for [formula] For higher Ni concentration the reduction of the lattice thermal conductivity saturates. Our theoretical analysis indicates that this reduction of the lattice thermal conductivity cannot be explained solely by point-defect scattering of the phonons. Rather, we can fit the lattice thermal conductivity of Ni-doped [formula] by introducing an electron-phonon scattering mechanism, and this demonstrates that the …
Low Pressure Synthesis Of Bulk, Polycrystalline Gallium Nitride, Alberto Argoitia, Cliff C. Hayman, John C. Angus, Long Wang, Jeffrey S. Dyck, Kathleen Kash
Low Pressure Synthesis Of Bulk, Polycrystalline Gallium Nitride, Alberto Argoitia, Cliff C. Hayman, John C. Angus, Long Wang, Jeffrey S. Dyck, Kathleen Kash
Jeffrey Dyck
Thick films of polycrystalline GaN were grown at low pressures by direct reaction of atomic nitrogen with liquid Ga without the presence of a substrate. The crystals were confirmed to be wurtzitic GaN by x-ray diffraction, transmission electron microscopy, Raman spectroscopy, and elemental analysis. Photoluminescence spectra showed near band edge peaks and broad yellow band emission at both 298 and 10 K. The results show that atomic nitrogen is an attractive alternative to high pressure N2 for the saturation of liquid gallium with nitrogen for the synthesis of bulk GaN.