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Engineering Physics

Ferromagnetic materials

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Ferromagnetism Of Magnetically Doped Topological Insulators In Crxbi2− Xte3 Thin Films, Yan Ni, Z. Zhang, Ikenna C. Nlebedim, M. Ravi Hadimani, Gary L. Tuttle, David C. Jiles Jun 2017

Ferromagnetism Of Magnetically Doped Topological Insulators In Crxbi2− Xte3 Thin Films, Yan Ni, Z. Zhang, Ikenna C. Nlebedim, M. Ravi Hadimani, Gary L. Tuttle, David C. Jiles

Gary Tuttle

We investigated the effect of magnetic doping on magnetic and transport properties of Bi2Te3thin films. CrxBi2−xTe3 thin films with x = 0.03, 0.14, and 0.29 were grown epitaxially on mica substrate with low surface roughness (∼0.4 nm). It is found that Cr is an electron acceptor in Bi2Te3 and increases the magnetization of CrxBi2−xTe3. When x = 0.14 and 0.29,ferromagnetism appears in CrxBi2−xTe3 thin films, where anomalous Hall effect and weak localization of magnetoconductance were observed. The Curie temperature, coercivity, and remnant Hall resistance of thin films increase with increasing Cr concentration. The Arrott-Noakes plot demonstrates that the critical mechanism …


Low-Temperature Ferromagnetic Properties Of The Diluted Magnetic Semiconductor Sb2-X Crx Te3 ., Jeffrey Dyck, Č. Drašar, P. LošŤÁK, C. Uher Mar 2005

Low-Temperature Ferromagnetic Properties Of The Diluted Magnetic Semiconductor Sb2-X Crx Te3 ., Jeffrey Dyck, Č. Drašar, P. LošŤÁK, C. Uher

Jeffrey Dyck

We report on magnetic and electrical transport properties of Sb2-x Crx Te3 single crystals with 0⩽x⩽0.095 over temperatures from 2 K to 300 K . A ferromagnetic state develops in these crystals at low temperatures with Curie temperatures that are proportional to x (for x>0.014 ), attaining a maximum value of 20 K for x=0.095 . Hysteresis below TC for the applied field parallel to the c axis is observed in both magnetization and Hall-effect measurements. Magnetic as well as transport data indicate that Cr takes the 3+ (3 d3 ) valence state, substituting for antimony in the host …