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Characteriation Of Bulk, Polycrystalline Indium Nitride Grown Of Subatmospheric Pressures, Jeffrey Dyck, Kathleen Kash, Kwieseon Kim, Walter Lambrecht, Cliff Hayman, Alberto Argoitia, Michael Grossner, Willie Zhou, John Angus
Characteriation Of Bulk, Polycrystalline Indium Nitride Grown Of Subatmospheric Pressures, Jeffrey Dyck, Kathleen Kash, Kwieseon Kim, Walter Lambrecht, Cliff Hayman, Alberto Argoitia, Michael Grossner, Willie Zhou, John Angus
Jeffrey Dyck
Polycrystalline, wurtzitic indium nitride was synthesized by saturating indium metal with atomic nitrogen from a microwave plasma source. Plasma synthesis avoids the high equilibrium pressures required when molecular nitrogen is used as the nitrogen source. Two types of growth were observed: 1) small amounts of indium nitride crystallized from the melt during cooling and 2) hexagonal platelets formed adjacent to the In metal source on the crucible sides. The mechanism of this latter growth is not established, but may involve transport of indium as a liquid film. The crystals were characterized by electron diffraction, X-ray diffraction, elemental analysis, scanning electron …
Synthesis Of Bulk, Polycrystalline Gallium Nitride At Low Pressures, Alberto Argoitia, John Angus, Cliff Hayman, Long Wang, Jeffrey Dyck, Kathleen Kash
Synthesis Of Bulk, Polycrystalline Gallium Nitride At Low Pressures, Alberto Argoitia, John Angus, Cliff Hayman, Long Wang, Jeffrey Dyck, Kathleen Kash
Jeffrey Dyck
Bulk, polycrytalline gallium nitride was crystallized from gallium saturated with nitrogen obtained from a microwave electron cyclotron resonance source. The polycrystalline samples are wurtzitic and n-type. Well-faceted crystals give near-band-edge and yellow band photo-luminescence at both 10K and 300K. The results show that atomic nitrogen is an attractive alternative to high pressure molecular nitrogen for saturation of gallium with nitrogen for synthesis of bulk gallium nitride.