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Articles 1 - 4 of 4
Full-Text Articles in Physics
Adaptive Circuits Using Pfet Floating-Gate Devices, Paul Hasler, Bradley Minch, Chris Diorio
Adaptive Circuits Using Pfet Floating-Gate Devices, Paul Hasler, Bradley Minch, Chris Diorio
Bradley Minch
In this paper, we describe our floating-gate pFET device, with its many circuit applications and supporting experimental measurements. We developed these devices in standard double-poly CMOS technologies by utilizing many effects inherent in these processes. We add floating-gate charge by electron tunneling, and we remove floating-gate charge by hot-electron injection. With this floating-gate technology, we cannot only build analog EEPROMs, we can also implement adaptation and learning when we consider floating-gate devices to be circuit elements with important time-domain dynamics. We start by discussing non-adaptive properties of floating-gate devices and we present two representative non-adaptive applications. First, we discuss using …
Switch Yard Operation In Thermal Power Plant(Katpp Jhalawar Rajasthan), Radhey Shyam Meena Er.
Switch Yard Operation In Thermal Power Plant(Katpp Jhalawar Rajasthan), Radhey Shyam Meena Er.
Radhey Shyam Meena
Switchyard Provides the facilities for switching ,protection & Control of electric power. To handle high Voltage power with proper Safety measures. To isolate the noises coming from the grid with true 50Hz power SWITCH YARD IS IMPORTANT PART IN THERMAL PLANT. IN KALISINDH THERMAL 400KV AND 220KV SWITCH YARD LOCATED.
Size-Dependent Metal-Insulator Transition In Pt-Dispersed Sio2 Thin Film: A Candidate For Future Non-Volatile Memory, Albert B. Chen
Size-Dependent Metal-Insulator Transition In Pt-Dispersed Sio2 Thin Film: A Candidate For Future Non-Volatile Memory, Albert B. Chen
Albert B Chen
Non-volatile random access memories (NVRAM) are promising data storage and processing devices. Various NVRAM, such as FeRAM and MRAM, have been studied in the past. But resistance switching random access memory (RRAM) has demonstrated the most potential for replacing flash memory in use today. In this dissertation, a novel RRAM material design that relies upon an electronic transition, rather than a phase change (as in chalcogenide Ovonic RRAM) or a structural change (such in oxide and halide filamentary RRAM), is investigated. Since the design is not limited to a single material but applicable to general combinations of metals and insulators, …
Emp And Geomagnetic Storm Protection Of Critical Infrastructure, George H. Baker Iii
Emp And Geomagnetic Storm Protection Of Critical Infrastructure, George H. Baker Iii
George H Baker
EMP and solar storm wide geographic coverage and ubiquitous system effects beg the question of “Where to begin?” with protection efforts. Thus, in addressing these “wide area electromagnetic (EM) effects,” we must be clever in deciding where to invest limited resources. Based on simple risk analysis, the electric power and communication infrastructures emerge as the highest priority for EM protection. Programs focused on these highest risk infrastructures will go a long way in lessoning societal impact. Given the national scope of the effects, such programs must be coordinated at the national level but implemented at local level. Because wide-area EM …