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Full-Text Articles in Physics
Significant Suppression Of Ferromagnetism By Hydrostatic Pressure In The Diluted Magnetic Semiconductor Sb2-Xvxte3 With X <~ 0.03, Jeffrey Dyck, T J. Mitchell, A J. Luciana, P C. Quayle, C DrašAr, P LošŤÁK
Significant Suppression Of Ferromagnetism By Hydrostatic Pressure In The Diluted Magnetic Semiconductor Sb2-Xvxte3 With X <~ 0.03, Jeffrey Dyck, T J. Mitchell, A J. Luciana, P C. Quayle, C DrašAr, P LošŤÁK
Jeffrey Dyck
The authors report on the hydrostatic pressure dependence of the magnetotransport properties of ferromagnetic Sb2-xVxTe3 single crystals with x=0.02—0.03. Pressure significantly increases the free hole concentration in these compounds. In turn, the Curie temperature is suppressed by roughly 40%, which goes against many models that would predict an increase in Curie temperature with increasing carrier concentration. These results indicate that the ferromagnetism in these materials is carrier mediated and that a full Ruderman-Kittel-Kasuya-Yosida model that takes into account the oscillatory nature of the indirect exchange interaction among localized spins is needed in order to explain the data.
Lattice Thermal Conductivity Of K2(Bi1_Zsbz)8se13 Solid Solutions, Jeffrey S. Dyck, Theodora Kyratsi, Evripides Hatzikraniotis, M Paraskevopoulous, H. K. Shin, Ctirad Uher, Mercouri Kanatzidis
Lattice Thermal Conductivity Of K2(Bi1_Zsbz)8se13 Solid Solutions, Jeffrey S. Dyck, Theodora Kyratsi, Evripides Hatzikraniotis, M Paraskevopoulous, H. K. Shin, Ctirad Uher, Mercouri Kanatzidis
Jeffrey Dyck
The family of solid solutions of the type B -K2(Bi1_zSbz)8Se13 (0
Cubic : Bulk Thermoelectric Materials With High Figure Of Merit, Kuei Hsu, Sim Loo, Fu Guo, Wei Chen, Jeffrey Dyck, Cterid Uher, Tim Hogan, E. Polychroniadis, Mercouri Kanatzidis
Cubic : Bulk Thermoelectric Materials With High Figure Of Merit, Kuei Hsu, Sim Loo, Fu Guo, Wei Chen, Jeffrey Dyck, Cterid Uher, Tim Hogan, E. Polychroniadis, Mercouri Kanatzidis
Jeffrey Dyck
The conversion of heat to electricity by thermoelectric devices may play a key role in the future for energy production and utilization. However, in order to meet that role, more efficient thermoelectric materials are needed that are suitable for high-temperature applications. We show that the material system may be suitable for this purpose. With m = 10 and 18 and doped appropriately, n-type semiconductors can be produced that exhibit a high thermoelectric figure of merit of ~2.2 at 800 kelvin. In the temperature range 600 to 900 kelvin, the material is expected to outperform all reported bulk thermoelectrics, thereby earmarking …
Magnetic And Transport Properties Of The V2– Vi3 Diluted Magnetic Semiconductor Sb2_Xmnxte3, Jeffrey Dyck, P. Svanda, P. Lostak, J. Horak, W. Chen, C. Uher
Magnetic And Transport Properties Of The V2– Vi3 Diluted Magnetic Semiconductor Sb2_Xmnxte3, Jeffrey Dyck, P. Svanda, P. Lostak, J. Horak, W. Chen, C. Uher
Jeffrey Dyck
We have measured electrical and magnetic properties of single crystals of Sb2_xMnxTe3 with x =0 – 0.045 at temperatures of 2 K to 300 K. Hall effect measurements indicate that each manganese atom donates approximately one hole to the valence band. The magnetic susceptibility is paramagnetic down to 2 K, and both Curie–Weiss and Brillouin analyses show that manganese substitutes for Sb and takes the Mn2+ state with S=5/2. Contrary to the case of III–V host matrices, manganese does not stimulate ferromagnetic order in the family of bulk layered V2– VI3 diluted magnetic semiconductors, at least in the range of …
Effect Of Sn Substituting For Sb On The Low-Temperature Transport Properties Of Ytterbium-Filled Skutterudites, J. Yang, D. Morelli, G. Meisner, W. Chen, Jeffrey Dyck, C. Uher
Effect Of Sn Substituting For Sb On The Low-Temperature Transport Properties Of Ytterbium-Filled Skutterudites, J. Yang, D. Morelli, G. Meisner, W. Chen, Jeffrey Dyck, C. Uher
Jeffrey Dyck
We examine the effect of alloying Sn on the Sb site of ytterbium-filled skutterudites, a promising class of thermoelectric materials. We report measurements of the Hall effect, electrical resistivity, Seebeck coefficient, and thermal conductivity between 2 and 300 K on two series of samples having different ytterbium filling fractions: Yb0.19Co4Sb12-xSnx, with x=0, 0.05, 0.1, and 0.2, and Yb0.5Co4Sb12-xSnx, with x=0.5, 0.6, 0.8, 0.83, and 0.9. We find that the substitution of Sn does not lower the electron concentration of these samples, but rather gives rise to a p-type carrier. Hall measurement data for Yb0.5Co4Sb11.17Sn0.83 can be understood in the context …
Heat Transport In Sb2àXvxte3 Single Crystals, Jeffrey Dyck, W. Chen, C. Uher, Č. DrašAr, P. LošŤÁK
Heat Transport In Sb2àXvxte3 Single Crystals, Jeffrey Dyck, W. Chen, C. Uher, Č. DrašAr, P. LošŤÁK
Jeffrey Dyck
Antimony telluride doped with small concentrations of vanadium was recently identified as a diluted magnetic semiconductor. We present a study of the heat transport in single crystals of [formula] with [formula] 0.01, 0.02, and 0.03. Thermopower and thermal conductivity were measured from 1.5 K to 300 K. The thermopower is positive for all samples investigated and has a modest dependence on vanadium content. At low temperatures, the lattice thermal conductivity has an approximate [formula] dependence and the data up to 100 K can be fitted well assuming that phonons scatter on boundaries, point defects, charge carriers, and other phonons. Theoretical …
Highly Anisotropic Crystal Growth And Thermoelectric Properties Of K2bi8_Xsbxse13 Solid Solutions: Band Gap Anomaly At Low X, Jeffrey S. Dyck, Theodora Kyratsi, Wei Chan, Duck-Young Chung, Ctirad Uher, Konstantinos Paraskevopoulos, Mercouri Kanatzidis
Highly Anisotropic Crystal Growth And Thermoelectric Properties Of K2bi8_Xsbxse13 Solid Solutions: Band Gap Anomaly At Low X, Jeffrey S. Dyck, Theodora Kyratsi, Wei Chan, Duck-Young Chung, Ctirad Uher, Konstantinos Paraskevopoulos, Mercouri Kanatzidis
Jeffrey Dyck
The thermoelectric properties of solid solutions of the type B -K2Bi8_xSbxSe13 (0
Transport Properties Of Polycrystalline Type-I Sn Clathrates, G. S. Nolas, J. L. Cohn, Jeffrey Dyck, C. Uher, J. Lang
Transport Properties Of Polycrystalline Type-I Sn Clathrates, G. S. Nolas, J. L. Cohn, Jeffrey Dyck, C. Uher, J. Lang
Jeffrey Dyck
Thermal conductivity, resistivity, Seebeck coefficient, and Hall measurements on polycrystalline Sn-clathrate compounds with the type-I hydrate crystal structure are reported. Interstitial alkali-metal atoms in these compounds reside inside polyhedral cavities formed by the tetrahedrally bonded Sn network atoms. Localized disorder associated with “rattling” motion of these interstitial atoms contributes to the low thermal conductivity of these semiconducting compounds. The Hall coefficient and resistivity for some compounds exhibit nonmonotonic temperature dependences consistent with a crossover with decreasing temperature from conduction-band to impurity-band conduction. The carrier mobility is found to be low even in the absence of interstitial atoms within the Sn …
Thermoelectric Properties Of The N-Type Filled Skutterudite Ba0.3co4sb12 Doped With Ni, Jeffrey Dyck, Wei Chen, Ctirad Uher, Lidong Chen, Xinfeng Tang, Toshio Hirai
Thermoelectric Properties Of The N-Type Filled Skutterudite Ba0.3co4sb12 Doped With Ni, Jeffrey Dyck, Wei Chen, Ctirad Uher, Lidong Chen, Xinfeng Tang, Toshio Hirai
Jeffrey Dyck
Synthesis and electrical and thermal transport properties are reported for several filled skutterudite compounds doped with Ni: Ba0.3NixCo4_xSb12 with 0
Diluted Magnetic Semiconductors Based On Sb2àXvxte3 „0.01ïXï0.03., Jeffrey Dyck, Pavel Hájek, Petr LošŤÁK, Ctirad Uher
Diluted Magnetic Semiconductors Based On Sb2àXvxte3 „0.01ïXï0.03., Jeffrey Dyck, Pavel Hájek, Petr LošŤÁK, Ctirad Uher
Jeffrey Dyck
We report on a diluted magnetic semiconductor based on the [formula] tetradymite structure doped with very low concentrations of vanadium (1—3 at. %). The anomalous transport behavior and robust magnetic hysteresis loops observed in magnetotransport and magnetic measurements are experimental manifestations of the ferromagnetic state in these materials. The [formula] exchange between holes and vanadium [formula] spins is estimated from the behavior of the magnetoresistance. A Curie temperature of at least 22 K is observed for [formula] This discovery offers possibilities for exploring magnetic properties of other tetradymite structure semiconductors doped with a wide range of [formula] transition metals.
Effect Of Ni On The Transport And Magnetic Properties Of Co1àXnixsb3, Jeffrey Dyck, Wei Chen, Jihui Yang, Gregory P. Meisner, Ctirad Uher
Effect Of Ni On The Transport And Magnetic Properties Of Co1àXnixsb3, Jeffrey Dyck, Wei Chen, Jihui Yang, Gregory P. Meisner, Ctirad Uher
Jeffrey Dyck
The filled skutterudite compounds based on the binary skutterudite [formula] are currently being investigated for their potential applications as thermoelectric materials. One route to optimization of these compounds is by doping on the Co site. An obvious candidate for an n-type dopant is Ni, since it has one more electron in its valence shell than Co. Up to now, however, only high concentrations of Ni in [formula] have been studied; and the valence of Ni in this compound and its influence on the transport and magnetic properties has been an open question. We present electrical resistivity, thermopower, Hall effect, magnetoresistance, …
Low-Temperature Ferromagnetism And Magnetic Anisotropy In The Novel Diluted Magnetic Semiconductor Sb2−Xvxte3, Jeffrey Dyck, Wei Chen, Pavel Hájek, Petr Lošt’Ák, Ctirad Uher
Low-Temperature Ferromagnetism And Magnetic Anisotropy In The Novel Diluted Magnetic Semiconductor Sb2−Xvxte3, Jeffrey Dyck, Wei Chen, Pavel Hájek, Petr Lošt’Ák, Ctirad Uher
Jeffrey Dyck
We report on a novel diluted magnetic semiconductor based on the Sb2Te3 tetradymite structure doped with very low concentrations of vanadium (1–3at%). Anisotropy in the magnetic hysteresis loops and magnetoresistance are observed at temperatures below the ferromagnetic ordering temperature. A Curie temperature of 24K is observed for Sb1.97V0.03Te3.
Influence Of Electron-Phonon Interaction On The Lattice Thermal Conductivity Of Co1àXnixsb3, J. Yang, D. T. Morelli, G. P. Meisner, W. Chen, Jeffrey Dyck, C. Uher
Influence Of Electron-Phonon Interaction On The Lattice Thermal Conductivity Of Co1àXnixsb3, J. Yang, D. T. Morelli, G. P. Meisner, W. Chen, Jeffrey Dyck, C. Uher
Jeffrey Dyck
We have investigated the effect of electron-phonon scattering in a series of n-type nickel-doped [formula] skutterudite materials. Samples were polycrystalline of the form [formula] with [formula] 0.001, 0.003, 0.005, 0.0075, and 0.01. The lattice thermal conductivity decreases dramatically with increasing Ni doping for [formula] For higher Ni concentration the reduction of the lattice thermal conductivity saturates. Our theoretical analysis indicates that this reduction of the lattice thermal conductivity cannot be explained solely by point-defect scattering of the phonons. Rather, we can fit the lattice thermal conductivity of Ni-doped [formula] by introducing an electron-phonon scattering mechanism, and this demonstrates that the …
Thermoelectric Properties Of K[Subscript 2]Bi[Subscript 8-X]Sb[Subscript X]Se[Subscript 13] Solid Solutions And Se Doping [Et Al.], Theodora Kyratski, Jeffrey Dyck, Wei Chen
Thermoelectric Properties Of K[Subscript 2]Bi[Subscript 8-X]Sb[Subscript X]Se[Subscript 13] Solid Solutions And Se Doping [Et Al.], Theodora Kyratski, Jeffrey Dyck, Wei Chen
Jeffrey Dyck
Our efforts to improve the thermoelectric properties of β-K2Bi8Se13, led to systematic studies of solid solutions of the type β-K2Bi8−xSbxSe13. The charge transport properties and thermal conductivities were studied for selected members of the series. Lattice thermal conductivity decreases due to the mass fluctuation generated in the lattice by the mixed occupation of Sb and Bi atoms. Se excess as a dopant was found to increase the figure-of merit of the solid solutions.
A2bi8se1 3 (A = Rb, Cs), Csbi3.67se6, And Babi2< /Inf>Se4: New Ternary Semiconducting Bismuth Selenides, Lykourgis Iordanidis, Paul Brazis, Theodora Kyratsi, John Irel, Melissa Lane, Carl Kannewurf, Wei Chen, Jeffrey Dyck, Ctirad Uher, Nishant Ghelani, Tim Hogan, Mercouri Kanatzidis
A2bi8se1 3 (A = Rb, Cs), Csbi3.67se6, And Babi2< /Inf>Se4: New Ternary Semiconducting Bismuth Selenides, Lykourgis Iordanidis, Paul Brazis, Theodora Kyratsi, John Irel, Melissa Lane, Carl Kannewurf, Wei Chen, Jeffrey Dyck, Ctirad Uher, Nishant Ghelani, Tim Hogan, Mercouri Kanatzidis
Jeffrey Dyck
No abstract provided.
The Influence Of Ni On The Transport Properties Of Cosb3, C. Uher, Jeffrey Dyck, W. Chen, G. Meisner, J. Yang
The Influence Of Ni On The Transport Properties Of Cosb3, C. Uher, Jeffrey Dyck, W. Chen, G. Meisner, J. Yang
Jeffrey Dyck
The effect of Ni doping on the Co site of the binary skutterudite CoSb3 is investigated. We measured resistivity, Hall effect, magnetoresistance, thermopower, thermal conductivity, and magnetization of a series of samples of the form Co1-xNixSb3 with x in the range x=0 to x=0.01. We find that Ni takes the tetravalent state Ni4+, assumes the d6 electronic configuration for the lower energy non-bonding orbitals, and gives an electron to the conduction band. Ni doping dramatically suppresses the thermal conductivity, changes the temperature dependence of the thermopower, and increases the carrier concentration. Low temperature anomalies in thermopower, Hall coefficient and magnetoresistance …
Low Pressure Synthesis Of Bulk, Polycrystalline Gallium Nitride, Alberto Argoitia, Cliff C. Hayman, John C. Angus, Long Wang, Jeffrey S. Dyck, Kathleen Kash
Low Pressure Synthesis Of Bulk, Polycrystalline Gallium Nitride, Alberto Argoitia, Cliff C. Hayman, John C. Angus, Long Wang, Jeffrey S. Dyck, Kathleen Kash
Jeffrey Dyck
Thick films of polycrystalline GaN were grown at low pressures by direct reaction of atomic nitrogen with liquid Ga without the presence of a substrate. The crystals were confirmed to be wurtzitic GaN by x-ray diffraction, transmission electron microscopy, Raman spectroscopy, and elemental analysis. Photoluminescence spectra showed near band edge peaks and broad yellow band emission at both 298 and 10 K. The results show that atomic nitrogen is an attractive alternative to high pressure N2 for the saturation of liquid gallium with nitrogen for the synthesis of bulk GaN.