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Nonlinear Optical Properties Of Novel Nanostructured Ion Implanted Laser Ablated Silicon Using Femtosecond Pulse Excitation, Elaine Nicole Lalanne
Nonlinear Optical Properties Of Novel Nanostructured Ion Implanted Laser Ablated Silicon Using Femtosecond Pulse Excitation, Elaine Nicole Lalanne
Dissertations
The study of the nonlinear optical properties of novel nanostructured ion implanted and laser ablation of Silicon is motivated by the need for materials that exhibit large values of the real part of the third order nonlinear susceptibility (χ(3)Re). This property is essential for light controlled phase or refractive index modulation at low power, where the optical properties are used for optical switching devices. Previous nanosecond (ns) measurements indicated values of-2.8 x 10 -5; esu ( γ = 532 nm) for χ(3)Re.
The characterization of nonlinear optical properties of the samples was studied …