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New Jersey Institute of Technology

2001

Ultrathin Silicon Wafer Bonding

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Ultrathin Silicon Wafer Bonding Physics And Applications, Michael H. Beggans May 2001

Ultrathin Silicon Wafer Bonding Physics And Applications, Michael H. Beggans

Dissertations

Ultrathin silicon wafer bonding is an emerging process that simplifies device fabrication, reduces manufacturing costs, increases yield, and allows the realization of novel devices. Ultrathin silicon wafers are between 3 and 200 microns thick with all the same properties of the thicker silicon wafers (greater than 300 microns) normally used by the semiconductor electronics industry. Wafer bonding is one technique by which multiple layers are formed.

In this thesis, the history and practice of wafer bonding is described and applied to the manufacture of microelectomechanical systems (MEMS) devices with layer thickness on the scale of microns. Handling and processing problems …