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Full-Text Articles in Physics

Gd5(Si,Ge)4 Thin Film Displaying Large Magnetocaloric And Strain Effects Due To Magnetostructural Transition, Ravi L. Hadimani, Joao H. B. Silva, Andre M. Pereira, Devo L. Schlagel, Thomas A. Lograsso, Yang Ren, David C. Jiles, Joao P. Araújo Jan 2015

Gd5(Si,Ge)4 Thin Film Displaying Large Magnetocaloric And Strain Effects Due To Magnetostructural Transition, Ravi L. Hadimani, Joao H. B. Silva, Andre M. Pereira, Devo L. Schlagel, Thomas A. Lograsso, Yang Ren, David C. Jiles, Joao P. Araújo

Ames Laboratory Publications

Magnetic refrigeration based on the magnetocaloric effect is one of the best alternatives to compete with vapor-compression technology. Despite being already in its technology transfer stage, there is still room for optimization, namely, on the magnetic responses of the magnetocaloric material. In parallel, the demand for different magnetostrictive materials has been greatly enhanced due to the wide and innovative range of technologies that emerged in the last years (from structural evaluation to straintronics fields). In particular, the Gd5(Six Ge1−x)4 compounds are a family of well-known alloys that present both giant magnetocaloric and colossal magnetostriction effects. Despite their ...


Weak Anti-Localization And Quantum Oscillations Of Surface States In Topological Insulator Bi2se2te, Lihong Bao, Liang He, Nicholas R. Meyer, Xufeng Kou, Peng Zhang, Zhi-Gang Chen, Alexei V. Fedorov, Trevor M. Riedemann, Thomas A. Lograsso, Kang L. Wang, Gary Tuttle, Faxian Xiu Oct 2012

Weak Anti-Localization And Quantum Oscillations Of Surface States In Topological Insulator Bi2se2te, Lihong Bao, Liang He, Nicholas R. Meyer, Xufeng Kou, Peng Zhang, Zhi-Gang Chen, Alexei V. Fedorov, Trevor M. Riedemann, Thomas A. Lograsso, Kang L. Wang, Gary Tuttle, Faxian Xiu

Ames Laboratory Publications

Topological insulators, a new quantum state of matter, create exciting opportunities for studying topological quantum physics and for exploring spintronic applications due to their gapless helical metallic surface states. Here, we report the observation of weak anti-localization and quantum oscillations originated from surface states in Bi2Se2Te crystals. Angle-resolved photoemission spectroscopy measurements on cleaved Bi2Se2Te crystals show a well-defined linear dispersion without intersection of the conduction band. The measured weak anti-localization effect agrees well with the Hikami-Larkin-Nagaoka model and the extracted phase coherent length shows a power-law dependence with temperature ( ∼T−0.44), indicating the presence of the surface states. More ...


Magnetic Anisotropy And Phase Transitions In Single-Crystal Tb5(Si2.2ge1.8), M. Han, J. E. Snyder, W. Tang, Thomas A. Lograsso, Deborah L. Schlagel, David C. Jiles May 2005

Magnetic Anisotropy And Phase Transitions In Single-Crystal Tb5(Si2.2ge1.8), M. Han, J. E. Snyder, W. Tang, Thomas A. Lograsso, Deborah L. Schlagel, David C. Jiles

Ames Laboratory Conference Papers, Posters, and Presentations

The Tb5(SixGe4−x) alloy system has many features in common with the Gd5(SixGe4−x)system although it has a more complex magnetic and structural phase diagram. This paper reports on the magnetic anisotropy and magnetic phase transition of single-crystalTb5(Si2.2Ge1.8) which has been investigated by the measurements of M-H and M-T along the a, b, and c axes. The variation of 1/χ vs T indicates that there is a transition from paramagnetic to ferromagnetic at Tc = 110 K. Below this ...


Electrical Transport In Amorphous Semiconducting Almgb14 Films, Y. Tian, G. Li, Joseph Shinar, N. L. Wang, Bruce A. Cook, James W. Anderegg, Alan P. Constant, Alan Mark Russell, J. E. Snyder Aug 2004

Electrical Transport In Amorphous Semiconducting Almgb14 Films, Y. Tian, G. Li, Joseph Shinar, N. L. Wang, Bruce A. Cook, James W. Anderegg, Alan P. Constant, Alan Mark Russell, J. E. Snyder

Materials Science and Engineering Publications

The electrical transport properties of semiconducting AlMgB14films deposited at room temperature and 573K are reported in this letter. The as-deposited films are amorphous, and they exhibit high n-type electrical conductivity, which is believed to stem from the conduction electrons donated by Al, Mg, and/or Fe impurities in these films. The film deposited at 573K is less conductive than the room-temperature-deposited film. This is attributed to the nature of donor or trap states in the band gap related to the different deposition temperatures.


Dynamics Of The Magnetic Field-Induced First Order Magnetic-Structural Phase Transformation Of Gd5(Si0.5ge0.5)4, J. Leib, J. E. Snyder, Thomas A. Lograsso, Deborah L. Schlagel, David C. Jiles Jun 2004

Dynamics Of The Magnetic Field-Induced First Order Magnetic-Structural Phase Transformation Of Gd5(Si0.5ge0.5)4, J. Leib, J. E. Snyder, Thomas A. Lograsso, Deborah L. Schlagel, David C. Jiles

Ames Laboratory Conference Papers, Posters, and Presentations

The system Gd5(SixGe1−x)4 for 0.4⩽x⩽0.5 has been shown to have an unusual first order, coupled magnetic-structural phase transformation at the Curie temperature. Above the transformation temperature Tc, the material is paramagnetic with a monoclinic structure; below Tc, it is ferromagnetic with an orthorhombic structure. Another unusual feature of this phase transformation is that an applied magnetic field can increase Tc by 5 K per tesla. In this study, the magnetic-structural transformation in single crystalGd5Si2Ge2 was triggered by holding the sample at ...