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Iowa State University

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Materials Science and Engineering

Electrical and Computer Engineering Publications

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Full-Text Articles in Physics

Second Order Phase Transition Temperature Of Single Crystals Of Gd5si1.3ge2.7 And Gd5si1.4ge2.6, Ravi L. Hadimani, Yevgen Melikhov, Deborah L. Schlagel, Thomas A. Lograsso, Kevin W. Dennis, R. William Mccallum, David C. Jiles Jan 2015

Second Order Phase Transition Temperature Of Single Crystals Of Gd5si1.3ge2.7 And Gd5si1.4ge2.6, Ravi L. Hadimani, Yevgen Melikhov, Deborah L. Schlagel, Thomas A. Lograsso, Kevin W. Dennis, R. William Mccallum, David C. Jiles

Electrical and Computer Engineering Publications

Gd5(Six Ge 1−x)4 has mixed phases in the composition range 0.32 < x < 0.41, which have not been widely studied. In this paper, we have synthesized and indexed single crystal samples of Gd5Si1.3 Ge 2.7 and Gd5Si1.4 Ge 2.6. We have investigated the first order and second orderphase transition temperatures of these samples using magnetic moment vs. temperature andmagnetic moment vs. magnetic field at different temperatures. We have used a modified Arrott plot technique that was developed and reported by us previously to determine the “hidden” second order phase transition temperature of the orthorhombic II phase.


Growth And Characterization Of Pt-Protected Gd5si4 Thin Films, Ravi L. Hadimani, Yaroslav Mudryk, Timothy E. Prost, Vitalij K. Pecharsky, Karl A. Gschneidner Jr., David C. Jiles Jan 2014

Growth And Characterization Of Pt-Protected Gd5si4 Thin Films, Ravi L. Hadimani, Yaroslav Mudryk, Timothy E. Prost, Vitalij K. Pecharsky, Karl A. Gschneidner Jr., David C. Jiles

Electrical and Computer Engineering Publications

Successful growth and characterization of thin films of giant magnetocaloric Gd5(SixGe1−x)4were reported in the literature with limited success. The inherent difficulty in producing this complex material makes it difficult to characterize all the phases present in the thin films of this material. Therefore, thin film of binary compound of Gd5Si4 was deposited by pulsed laser deposition. It was then covered with platinum on the top of the film to protect against any oxidation when the film was exposed to ambient conditions. The average film thickness wasmeasured to be approximately 350 nm using a scanning electron microscopy, and ...