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Full-Text Articles in Physics
Gasb Thermophotovoltaic Cells Grown On Gaas By Molecular Beam Epitaxy Using Interfacial Misfit Arrays, Bor-Chau Juang, Ramesh B. Laghumavarapu, Brandon J. Foggo, Paul J. Simmonds, Andrew Lin, Baolai Liang, Diana L. Huffaker
Gasb Thermophotovoltaic Cells Grown On Gaas By Molecular Beam Epitaxy Using Interfacial Misfit Arrays, Bor-Chau Juang, Ramesh B. Laghumavarapu, Brandon J. Foggo, Paul J. Simmonds, Andrew Lin, Baolai Liang, Diana L. Huffaker
Physics Faculty Publications and Presentations
There exists a long-term need for foreign substrates on which to grow GaSb-based optoelectronic devices. We address this need by using interfacial misfit arrays to grow GaSb-based thermophotovoltaic cells directly on GaAs (001) substrates and demonstrate promising performance. We compare these cells to control devices grown on GaSb substrates to assess device properties and material quality. The room temperature dark current densities show similar characteristics for both cells on GaAs and on GaSb. Under solar simulation the cells on GaAs exhibit an open-circuit voltage of 0.121 V and a short-circuit current density of 15.5 mA/cm2. In addition, the …
Quantum Dot Resonant Tunneling Diode For Telecommunication Wavelength Single Photon Detection, H. W. Li, B. E. Kardynał, P. See, A. J. Shields, P. Simmonds, H. E. Beere, D. A. Ritchie
Quantum Dot Resonant Tunneling Diode For Telecommunication Wavelength Single Photon Detection, H. W. Li, B. E. Kardynał, P. See, A. J. Shields, P. Simmonds, H. E. Beere, D. A. Ritchie
Paul J. Simmonds
The authors present a quantum dot (QD) based single photon detector operating at a fiber optic telecommunication wavelength. The detector is based on an AlAs/In0.53Ga0.47As/AlAs double-barrier resonant tunneling diode containing a layer of self-assembled InAs QDs grown on an InP substrate. The device shows an internal efficiency of about 6.3% with a dark count rate of 1.58 × 10−6 ns−1 for 1310 nm photons.