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Full-Text Articles in Physics
Novel Magnetic And Optical Properties Of Sn1−XZnXO2 Nanoparticles, Nevil A. Franco, Kongara M. Reddy, Josh Eixenberger, Dmitri A. Tenne, Charles B. Hanna, Alex Punnoose
Novel Magnetic And Optical Properties Of Sn1−XZnXO2 Nanoparticles, Nevil A. Franco, Kongara M. Reddy, Josh Eixenberger, Dmitri A. Tenne, Charles B. Hanna, Alex Punnoose
Physics Faculty Publications and Presentations
In this work, we report on the effects of doping SnO2 nanoparticles with Zn2+ ions. A series of ∼2–3 nm sized Sn1−x ZnxO2 crystallite samples with 0 ≤ x ≤ 0.18 were synthesized using a forced hydrolysis method. Increasing dopant concentration caused systematic changes in the crystallite size, oxidation state of Sn, visible emission, and band gap of SnO2 nanoparticles. X-ray Diffraction studies confirmed the SnO2 phase purity and the absence of any impurity phases. Magnetic measurements at room temperature showed a weak ferromagnetic behavior characterized by an open hysteresis loop. Their …
Tensile Gaas(111) Quantum Dashes With Tunable Luminescence Below The Bulk Bandgap, Paul J. Simmonds
Tensile Gaas(111) Quantum Dashes With Tunable Luminescence Below The Bulk Bandgap, Paul J. Simmonds
Paul J. Simmonds
Strain-based band engineering in quantum dots and dashes has been predominantly limited to compressively strained systems. However, tensile strain strongly reduces the bandgaps of nanostructures, enabling nanostructures to emit light at lower energies than they could under compressive strain. We demonstrate the self-assembled growth of dislocation-free GaAs quantum dashes on an InP(111)B substrate, using a 3.8% tensile lattice-mismatch. Due to the high tensile strain, the GaAs quantum dashes luminesce at 110–240 meV below the bandgap of bulk GaAs. The emission energy is readily tuned by adjusting the size of the quantum dashes via deposition thickness. Tensile self-assembly creates new opportunities …
Adsorption-Controlled Growth Of Bivo4 By Molecular-Beam Epitaxy, D. A. Hillsberry, D. A. Tenne
Adsorption-Controlled Growth Of Bivo4 By Molecular-Beam Epitaxy, D. A. Hillsberry, D. A. Tenne
Physics Faculty Publications and Presentations
Single-phase epitaxial films of the monoclinic polymorph of BiVO4 were synthesized by reactive molecular-beam epitaxy under adsorption-controlled conditions. The BiVO4 films were grown on (001) yttria-stabilized cubic zirconia (YSZ) substrates. Four-circle x-ray diffraction, scanning transmission electron microscopy (STEM), and Raman spectroscopy confirm the epitaxial growth of monoclinic BiVO4 with an atomically abrupt interface and orientation relationship (001)BiVO4 ∥ (001)YSZ with [100]BiVO4 ∥ [100]YSZ. Spectroscopic ellipsometry, STEM electron energy loss spectroscopy (STEM-EELS), and x-ray absorption spectroscopy indicate that the films have a direct band gap of 2.5 ± 0.1 eV.
Metamorphic Gaasp Buffers For Growth Of Wide-Bandgap Ingap Solar Cells, J. Simon, S. Tomasulo, P. J. Simmonds, M. Romero, M. L. Lee
Metamorphic Gaasp Buffers For Growth Of Wide-Bandgap Ingap Solar Cells, J. Simon, S. Tomasulo, P. J. Simmonds, M. Romero, M. L. Lee
Paul J. Simmonds
GaAsxP1−x graded buffers were grown via solid source molecular beam epitaxy(MBE) to enable the fabrication of wide-bandgap InyGa1−yP solar cells. Tensile-strained GaAsxP1−x buffers grown on GaAs using unoptimized conditions exhibited asymmetric strain relaxation along with formation of faceted trenches, 100–300 nm deep, running parallel to the [011] direction. We engineered a 6 μm thick grading structure to minimize the faceted trench density and achieve symmetric strain relaxation while maintaining a threading dislocation density of ≤106 cm−2. In comparison, compressively-strained graded GaAsxP1−x buffers on …