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Full-Text Articles in Physics
Epitaxial Crn Thin Films With High Thermoelectric Figure Of Merit, Eric L. Thies, Daniel A. Hillsberry, Dmitri A. Tenne
Epitaxial Crn Thin Films With High Thermoelectric Figure Of Merit, Eric L. Thies, Daniel A. Hillsberry, Dmitri A. Tenne
Physics Faculty Publications and Presentations
A large enhancement of the thermoelectric figure of merit is reported in single crystalline films of CrN. The strong reduction of the lattice thermal conductivity in the rock-salt phase of this material is shown to be related to intrinsic lattice instabilities, which is similar to the resonant bonding effect proposed for cubic IV-VI compounds. These results demonstrate that useful ideas from classic thermoelectrics and phase change materials can be extended to transition metal nitrides and oxides.
Adsorption-Controlled Growth Of Bivo4 By Molecular-Beam Epitaxy, D. A. Hillsberry, D. A. Tenne
Adsorption-Controlled Growth Of Bivo4 By Molecular-Beam Epitaxy, D. A. Hillsberry, D. A. Tenne
Physics Faculty Publications and Presentations
Single-phase epitaxial films of the monoclinic polymorph of BiVO4 were synthesized by reactive molecular-beam epitaxy under adsorption-controlled conditions. The BiVO4 films were grown on (001) yttria-stabilized cubic zirconia (YSZ) substrates. Four-circle x-ray diffraction, scanning transmission electron microscopy (STEM), and Raman spectroscopy confirm the epitaxial growth of monoclinic BiVO4 with an atomically abrupt interface and orientation relationship (001)BiVO4 ∥ (001)YSZ with [100]BiVO4 ∥ [100]YSZ. Spectroscopic ellipsometry, STEM electron energy loss spectroscopy (STEM-EELS), and x-ray absorption spectroscopy indicate that the films have a direct band gap of 2.5 ± 0.1 eV.