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Effects Of Gaas(Sb) Cladding Layers On Inas/Alassb Quantum Dots, Paul J. Simmonds
Effects Of Gaas(Sb) Cladding Layers On Inas/Alassb Quantum Dots, Paul J. Simmonds
Paul J. Simmonds
The structural and optical properties of InAs self-assembled quantum dots buried in AlAs0.56Sb0.44 barriers can be controlled using GaAs1−xSbx cladding layers. These cladding layers allow us to manage the amount of Sb immediately underneath and above the InAs quantum dots. The optimal cladding scheme has a GaAs layer beneath the InAs, and a GaAs0.95Sb0.05 layer above. This scheme results in improved dot morphology and significantly increased photoluminescence (PL) intensity. Both power-dependent and time-resolved photoluminescence confirm that the quantum dots have type-II band alignment. Enhanced carrier lifetimes in this quantum dot system …