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Full-Text Articles in Physics
Heterojunction Metal-Oxide-Metal Au-Fe3O4-Au Single Nanowire Device For Spintronics, K. M. Reddy, Nitin P. Padture, Alex Punnoose, Charles Hanna
Heterojunction Metal-Oxide-Metal Au-Fe3O4-Au Single Nanowire Device For Spintronics, K. M. Reddy, Nitin P. Padture, Alex Punnoose, Charles Hanna
Physics Faculty Publications and Presentations
In this report, we present the synthesis of heterojunction magnetite nanowires in alumina template and describe magnetic and electrical properties from a single nanowire device for spintronics applications. Heterojunction Au-Fe-Au nanowire arrays were electrodeposited in porous aluminum oxide templates, and an extensive and controlled heat treatment process converted Fe segment to nanocrystalline cubic magnetite phase with well-defined Au-Fe3O4 interfaces as confirmed by the transmission electron microscopy. Magnetic measurements revealed Verwey transition shoulder around 120 K and a room temperature coercive field of 90 Oe. Current–voltage (I-V) characteristics of a single Au-Fe3O4-Au nanowire have …
Magnetoresistance Characteristics In Individual Fe3O4 Single Crystal Nanowire, K. M. Reddy, Nitin P. Padture, Alex Punnoose, Charles Hanna
Magnetoresistance Characteristics In Individual Fe3O4 Single Crystal Nanowire, K. M. Reddy, Nitin P. Padture, Alex Punnoose, Charles Hanna
Physics Faculty Publications and Presentations
We report on the magnetoresistance (MR) and electron transport measurements observed on asingle crystal magnetite nanowire prepared using a hydrothermal synthesis method. High-resolution electron microscopy revealed the single crystal magnetite nanowires with 80–120 nm thickness and up to 8 μm in length. Magnetic measurements showed the typical Verwey transition around 120 K with a 100 Oe room temperature coercivity and 45 emu/g saturationmagnetization, which are comparable to bulk magnetite. Electrical resistance measurements in 5-300 K temperature range were performed by scanning gate voltage and varying appliedmagnetic field. Electrical resistivity of the nanowire was found to be around 5 × …
Reproducible Nanostructure Fabrication Using Atomic Force Microscopy Indentation With Minimal Tip Damage, Seunghee Jeon, Bongwoo Ryu, Wonho Jhe, Zheong G. Khim, Byung I. Kim
Reproducible Nanostructure Fabrication Using Atomic Force Microscopy Indentation With Minimal Tip Damage, Seunghee Jeon, Bongwoo Ryu, Wonho Jhe, Zheong G. Khim, Byung I. Kim
Physics Faculty Publications and Presentations
A uniform pattern of quantum dots and nanowires were reproducibly fabricated by creating holes in a two-layer structure using atomic force microscopy (AFM) indentation, dry-etching of polymer resists, and metal deposition through the indentation holes. The two-layer structure was created by depositing a thin gold layer onto a polymethyl methacrylate (PMMA) layer on a silicon substrate. The indentation depth was set so that the AFM tip penetrated the thin gold layer without the tip contacting the silicon substrate. This two-layer indentation was used to create a pattern of holes in the thin gold layer. Then, the PMMA was exposed to …