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Full-Text Articles in Physics
Degenerate Parallel Conducting Layer And Conductivity Type Conversion Observed From P-Ge1 - YSnY (Y = 0.06%) Grown On N-Si Substrate, Mee-Yi Ryu, Yung Kee Yeo, M. Ahoujja, Thomas R. Harris, Richard T. Beeler, John Kouvetakis
Degenerate Parallel Conducting Layer And Conductivity Type Conversion Observed From P-Ge1 - YSnY (Y = 0.06%) Grown On N-Si Substrate, Mee-Yi Ryu, Yung Kee Yeo, M. Ahoujja, Thomas R. Harris, Richard T. Beeler, John Kouvetakis
Faculty Publications
Electrical properties of p-Ge1−ySny (y = 0.06%) grown on n-Si substrate were investigated through temperature-dependent Hall-effect measurements. It was found that there exists a degenerate parallel conducting layer in Ge1−ySny/Si and a second, deeper acceptor in addition to a shallow acceptor. This parallel conducting layer dominates the electrical properties of the Ge1−ySny layer below 50 K and also significantly affects those properties at higher temperatures. Additionally, a conductivity type conversion from p to n was observed around 370 K for this sample. A two-layer conducting model was used …
Electrical And Optical Characterization Of Si-Ge-Sn, Merle D. Hamilton
Electrical And Optical Characterization Of Si-Ge-Sn, Merle D. Hamilton
Theses and Dissertations
The electrical characterization of boron-doped p-Si0.08Ge0.90Sn0.02/p-Ge(100) and p-Si0.112Ge0.86Sn0.028/n-Si(100) with various epilayer thicknesses was measured using the Hall effect. The room temperature sheet carrier concentration ranged from 1.21 x 1013 – 1.32 x 1016 cm-2. The room temperature mobilities were measured to be between 166 and 717 cm2/V·s, depending on sample composition. In the low temperature regime, the mobility was mainly affected by ionized impurity scattering. In the high temperature regime, the mobility was mainly affected by …