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Electrical And Optical Characterization Of Si-Ge-Sn, Merle D. Hamilton

Theses and Dissertations

The electrical characterization of boron-doped p-Si_0.08Ge_0.90Sn_0.02/p-Ge(100) and p-Si_0.112Ge_0.86Sn_0.028/n-Si(100) with various epilayer thicknesses was measured using the Hall effect. The room temperature sheet carrier concentration ranged from 1.21 x 10¹³ – 1.32 x 10¹⁶ cm^-2. The room temperature mobilities were measured to be between 166 and 717 cm²/V·s, depending on sample composition. In the low temperature regime, the mobility was mainly affected by ionized impurity scattering. In the high temperature regime, the mobility was mainly affected by …