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Electrical Characterization Of Intrinsic And Induced Deep Level Defects In Hexagonal Sic, James D. Scofield
Electrical Characterization Of Intrinsic And Induced Deep Level Defects In Hexagonal Sic, James D. Scofield
Theses and Dissertations
Deep level defects in hexagonal SiC were studied using digital deep level transient spectroscopy (DLTS) methods over the temperature range of 100 to 800 deg K. New centers were found in bulk and epitaxial 6H-SiC with ionization energies between 0.38 to 1.3 eV, and levels from 0.2 to 0.856 eV were identified in 4H-SiC epitaxy. Direct correlation between inequivalent lattice sites was identified for energetic pairs associated with both vanadium and ion implanted Mg impurities. Nonradioative carrier capture mechanisms were studied and deep level trapping was found to proceed via lattice relaxation multi-phonon emission, indicating efficient electronic lattice coupling in …