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The Optical Emission And Absorption Properties Of Silicon-Germanium Superlattice Structures Grown On Non-Conventional Silicon Substrate Orientation, Theodore L. Kreifels
The Optical Emission And Absorption Properties Of Silicon-Germanium Superlattice Structures Grown On Non-Conventional Silicon Substrate Orientation, Theodore L. Kreifels
Theses and Dissertations
Optical emission and absorption properties of Si1-x Gex/Si superlattices grown on (100), (110), and (111) Si substrates were investigated to determine the optimal growth conditions for these structures to be used as infrared detectors. Fully-strained Si1-x Gex/Si superlattices were grown by molecular beam epitaxy MBE and examined using low-temperature photoluminescence PL to identify no-phonon and phonon-replica interband transitions across the alloy bandgap. Phonon-resolved emission was most intense for undoped quantum wells grown at 710°C for all three silicon orientations. Room temperature absorption measurements were conducted on (100) and (110) Si1-x Gex/Si …