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Full-Text Articles in Physics

Modeling Free-Carrier Absorption And Avalanching By Ultrashort Laser Pulses, Jeremy R. Gulley Nov 2011

Modeling Free-Carrier Absorption And Avalanching By Ultrashort Laser Pulses, Jeremy R. Gulley

Faculty Articles

In the past decade it was demonstrated experimentally that negatively-chirped laser pulses can lower the surface LIDT for wide band-gap materials by decreasing the number of photons required for photoionization on the leading edge of the pulse. Similarly, simulations have shown that positively-chirped pulses resulting from selffocusing and self-phase modulation in bulk dielectrics can alter the onset of laser-induced material modifications by increasing the number of photons required for photoionization on the leading edge of the pulse. However, the role of multi-chromatic effects in free-carrier absorption and avalanching has yet to be addressed. In this work a frequency-selective model of …


Energy Scaling Of Nanosecond Gain-Switched Cr2+:Znse Lasers, Vladimir V. Fedorov, Igor S. Moskalev, M. S. Mirov, S. B. Mirov, Torrey J. Wagner, Matthew J. Bohn, Patrick A. Berry, K. L. Schepler Feb 2011

Energy Scaling Of Nanosecond Gain-Switched Cr2+:Znse Lasers, Vladimir V. Fedorov, Igor S. Moskalev, M. S. Mirov, S. B. Mirov, Torrey J. Wagner, Matthew J. Bohn, Patrick A. Berry, K. L. Schepler

Faculty Publications

In this paper, we report record nanosecond output energies of gain-switched CrZnSe lasers pumped by Q-switched CrTmHoYAG 100 ns at 2.096 microns and Raman shifted NdYAG lasers 7 ns at 1.906 microns. In these experiments we used Brewster cut CrZnSe gain elements with a chromium concentration of 8x1018cm-3. Under CrTmHoYAG pumping, the first CrZnSe laser demonstrated 3.1 mJ of output energy, 52 slope efficiency and 110 nm linewidth centered at a wavelength of 2.47 microns. Maximum output energy of the second CrZnSe laser reached 10.1 mJ under H2 Raman shifted NdYAG laser pumping. The slope …