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Kinetics Of Light-Induced Metastable Defect Creation And Annealing In A-Si:H, Alp Osman Kodolbaş, Aynur Eray, Özcan Öktü

Turkish Journal of Physics

Constant Photocurrent Method (CPM) and steady state photoconductivity measurements are used to investigate the creation of light-induced metastable defects in a-Si:H at room temperature and their annealing. Light-induced metastable defect concentration N$_{d}$ varies with exposure time t_{e}as t_{e}^{r} with r=0.34\ pm 0.02, as expected from the recombination induced weak bond breaking model [1]. The validity of a stretched exponential model is also studied [2]. From the annealing experiments, the distribution of thermal annealing activation energies is calculated following the method proposed by Hata and Wagner [3]. Defects created at room temperature show a narrow distribution of annealing activation energies peaking …