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2002

Electrical & Computer Engineering Faculty Publications

Articles 1 - 7 of 7

Full-Text Articles in Physics

Cuin1-Xalxse2 Thin Films And Solar Cells, P. D. Paulson, M. W. Haimbodi, S. Marsillac, R. W. Birkmire, W. N. Shafarman Jun 2002

Cuin1-Xalxse2 Thin Films And Solar Cells, P. D. Paulson, M. W. Haimbodi, S. Marsillac, R. W. Birkmire, W. N. Shafarman

Electrical & Computer Engineering Faculty Publications

CuIn[sub 1-x]Al[sub x]Se[sub 2] thin films are investigated for their application as the absorber layer material for high efficiency solar cells. Single-phase CuIn[sub 1-x]Al[sub x]Se[sub 2] films were deposited by four source elemental evaporation with a composition range of 0≤x≤0.6. All these films demonstrate a normalized subband gap transmission >85% with 2 µm film thickness. Band gaps obtained from spectroscopic ellipsometry show an increase with the Al content in the CuIn[sub 1-x]Al[sub x]Se[sub 2] film with a bowing parameter of 0.62. The structural properties investigated using x-ray diffraction measurements show a decrease in lattice spacing as the Al content increases. …

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Atomic Hydrogen Cleaning Of Inp(100): Electron Yield And Surface Morphology Of Negative Electron Affinity Activated Surfaces, M. A. Hafez, H. E. Elsayed-Ali Jan 2002

Atomic Hydrogen Cleaning Of Inp(100): Electron Yield And Surface Morphology Of Negative Electron Affinity Activated Surfaces, M. A. Hafez, H. E. Elsayed-Ali

Electrical & Computer Engineering Faculty Publications

Atomic hydrogen cleaning of the InP(100) surface has been investigated using quantitative reflection high-energy electron diffraction. The quantum efficiency of the surface when activated to negative electron affinity was correlated with surface morphology. The electron diffraction patterns showed that hydrogen cleaning is effective in removing surface contaminants, leaving a clean, ordered, and (2×4)-reconstructed surface. After activation to negative electron affinity, a quantum efficiency of ∼6% was produced in response to photoactivation at 632 nm. Secondary electron emission from the hydrogen-cleaned InP(100)-(2×4) surface was measured and correlated to the quantum efficiency. The morphology of the vicinal InP(100) surface was investigated using …

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Comment On "Ultrafast Electron Optics: Propagation Dynamics Of Femtosecond Electron Packets" J. Appl. Phys. 92, 1643 (2002), Bao-Liang Qian, Hani E. Elsayed-Ali Jan 2002

Comment On "Ultrafast Electron Optics: Propagation Dynamics Of Femtosecond Electron Packets" J. Appl. Phys. 92, 1643 (2002), Bao-Liang Qian, Hani E. Elsayed-Ali

Electrical & Computer Engineering Faculty Publications

In a recent article 关J. Appl. Phys. 92, 1643 共2002兲兴 Siwick et al. investigated the space-charge-limited electron pulse propagation in a photoelectron gun using an analytical approach, referred to as mean-field theory, and a numerical N-body simulation. The results were compared with a one-dimensional fluid model 关J. Appl. Phys. 91, 462 共2002兲兴, and a conclusion was made that the fluid model overestimates the pulse duration after a certain propagation time. Although the mean-field theory and N-body simulation give exactly the same results for all examples studied, we point out that the expression for the on-axis potential in their mean-field model …

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High-Efficiency Solar Cells Based On Cu(Inal)Se[Sub 2] Thin Films, S. Marsillac, P. D. Paulson, M. W. Haimbodi, R. W. Birkmire, W. N. Shafarman Jan 2002

High-Efficiency Solar Cells Based On Cu(Inal)Se[Sub 2] Thin Films, S. Marsillac, P. D. Paulson, M. W. Haimbodi, R. W. Birkmire, W. N. Shafarman

Electrical & Computer Engineering Faculty Publications

A Cu(InAl)Se2solar cell with 16.9% efficiency is demonstrated using a Cu(InAl)Se2thin film deposited by four-source elemental evaporation and a device structure of glass/Mo/Cu(InAl)Se2/CdS/ZnO/indium tin oxide/(Ni/Algrid)/MgF2. A key to high efficiency is improved adhesion between the Cu(InAl)Se2 and the Mo back contact layer, provided by a 5-nm-thick Ga interlayer, which enabled the Cu(InAl)Se2 to be deposited at a 530 °C substrate temperature. Film and device properties are compared to Cu(InGa)Se2 with the same band gap of 1.16 eV. The solar cells have similar behavior, with performance limited by recombination through …

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121.6 Nm Radiation Source For Advanced Lithography, Jianxun Yan, Ashraf El-Dakrouri, Mounir Laroussi, Mool C. Gupta Jan 2002

121.6 Nm Radiation Source For Advanced Lithography, Jianxun Yan, Ashraf El-Dakrouri, Mounir Laroussi, Mool C. Gupta

Electrical & Computer Engineering Faculty Publications

A vacuum ultraviolet (VUV) light source based on a high-pressure cylindrical dielectric barrier discharge (DBD) has been developed. Intense and spectrally clean Lyman-α line at 121.6 nm was obtained by operating a DBD discharge in neon with a small admixture of hydrogen. The spectrum, optical power, stability, and efficiency of the source were measured. The influence of the gas mixture and total gas pressure on the VUV intensity has been investigated. Maximum optical power of 3.2 W and spectral width 0.03 nm was achieved. Power stability of 2% for 100 h of operation has also been obtained. The newly developed …

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Acceleration Element For Femtosecond Electron Pulse Compression, Bao-Liang Qian, Hani E. Elsayed-Ali Jan 2002

Acceleration Element For Femtosecond Electron Pulse Compression, Bao-Liang Qian, Hani E. Elsayed-Ali

Electrical & Computer Engineering Faculty Publications

An acceleration element is proposed for compressing the electron pulse duration in a femtosecond photoelectron gun. The element is a compact metal cavity with curved-shaped walls. An external voltage is applied to the cavity where a special electric field forms in such a way that the slow electrons in the electron pulse front are accelerated more than the fast electrons, and consequently the electron pulse duration will be compressed. The distribution of the electric field inside the acceleration cavity is analyzed for the geometry of the cavity. The electron dynamics in this acceleration cavity is also investigated numerically. Numerical results …

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Electron Pulse Broadening Due To Space Charge Effects In A Photoelectron Gun For Electron Diffraction And Streak Camera Systems, Bao-Liang Qian, Hani E. Elsayed-Ali Jan 2002

Electron Pulse Broadening Due To Space Charge Effects In A Photoelectron Gun For Electron Diffraction And Streak Camera Systems, Bao-Liang Qian, Hani E. Elsayed-Ali

Electrical & Computer Engineering Faculty Publications

The electron pulse broadening and energy spread, caused by space charge effects, in a photoelectron gun are studied analytically using a fluid model. The model is applicable in both the photocathode-to-mesh region and the postanode electron drift region. It is found that space charge effects in the photocathode-to-mesh region are generally unimportant even for subpicosecond pulses. However, because of the long drift distance, electron pulse broadening due to space charge effects in the drift region is usually significant and could be much larger than the initial electron pulse duration for a subpicosecond electron pulse. Space charge effects can also lead …

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