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Full-Text Articles in Physics
Review Of Hall Effect And Magnetoresistance Measurements In Gaas Materials And Devices, David C. Look
Review Of Hall Effect And Magnetoresistance Measurements In Gaas Materials And Devices, David C. Look
Physics Faculty Publications
The use of magnetic fields in the electrical characterization of semiconductor materials is familiar to everyone in the form of Hall‐effect measurements. However, there is another magnetic‐field‐based phenomenon, magnetoresistance (MR), which is highly useful but not nearly so familiar to the majority of workers. One of the unique features of MR measurements is their applicability to common device structures, in particular, field‐effect transistors (FETs) and contact‐resistance patterns. We will show how channel mobility information can be extracted from the MR data in metal‐semiconductor FETs (MESFETs) and modulation‐doped heterostructure FETs (MODFETs), and also how the material under ohmic contacts can be …
Influence Of Copper Doping On The Performance Of Optically Controlled Gaas Switches, St. T. Ko, V. K. Lakdawala, K. H. Schoenbach, M. S. Mazzola
Influence Of Copper Doping On The Performance Of Optically Controlled Gaas Switches, St. T. Ko, V. K. Lakdawala, K. H. Schoenbach, M. S. Mazzola
Electrical & Computer Engineering Faculty Publications
The influence of the copper concentration in silicon-doped gallium arsenide on the photoionization and photoquenching of charge carriers was studied both experimentally and theoretically. The studies indicate that the compensation ratio (NCu/NSi) is an important parameter for the GaAs:Si:Cu switch systems with regard to the turn-on and turn-off performance. The optimum copper concentration for the use of GaAs:Si:Cu as an optically controlled closing and opening switch is determined.