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1990

Atomic layer epitaxy

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Full-Text Articles in Physics

Deposition Of Zinc Selenide By Atomic Layer Epitaxy For Multilayer X-Ray Optics, J.K. Shurtleff, David D. Allred, R. T. Perkins, J. M. Thorne Jan 1990

Deposition Of Zinc Selenide By Atomic Layer Epitaxy For Multilayer X-Ray Optics, J.K. Shurtleff, David D. Allred, R. T. Perkins, J. M. Thorne

Faculty Publications

Thin film deposition techniques currently being used to produce multilayer x-ray optics (MXOs) have difficulty producing smooth, uniform multilayers with d-spacings less than about twelve angstroms. We are investigating atomic layer epitaxy (ALE) as an alternative to these techniques. ALE is a chemical vapor deposition technique which deposits an atomic layer of material during each cycle of the deposition process. The thickness of a film deposited by ALE depends only on the number of cycles. Multilayers deposited by ALE should be smooth and uniform with precise d-spacings which makes ALE an excellent technique for producing multilayer x-ray optics. We have …