Physics Commons^™

Effects Of Quantum Noise On A Two-Level System In A Single-Mode Cavity, Linda L. Vahala

Electrical & Computer Engineering Faculty Publications

The effects of quantum noise on a two-level system in the bad-cavity regime are considered perturbatively in the form of closure at the pair-correlation level. It is found that pair-correlation effects can reduce the level of semiclassical chaos. However, under the rotating-wave approximation (RWA), quantum noise can lead to chaos if there is an initial population inversion, while the full RWA Hamiltonian system remains integrable.

The Study Of Oxygen Transport Through Polycrystalline, Single Crystal And Alloyed Silver, Dongchuan Wu

Physics Theses & Dissertations

The permeation of oxygen through large grain polycrystalline silver, through the (110), (111) and (100) single crystals of silver and through Ag0.05Zr alloy have been studied over the temperature range of 400 - 800 °C. In addition, studies were also conducted using glow discharge dissociation of the supply side ( upstream ) molecular oxygen in order to examine whether normal dissociative adsorption is a limiting step in the overall transport process.

The permeability of oxygen through polycrystalline silver was found to be quite linear and quite repeatable. The diffusivity measurements were found to exhibit two distinct linear regions, one above …

A Mathematical Model Of The Dynamics Of An Optically Pumped Codoped Solid State Laser System, Thomas G. Wangler

Mathematics & Statistics Theses & Dissertations

This is a study of a mathematical model for the dynamics of an optically pumped codoped solid state laser system. The model comprises five first order, nonlinear, coupled, ordinary differential equations which describe the temporal evolution of the dopant electron populations in the laser crystal as well as the photon density in the laser cavity. The analysis of the model is conducted in three parts.

First, a detailed explanation of the modeling process is given and the full set of rate equations is obtained. The model is then simplified and certain qualitative properties of the solution are obtained.

In the …

Measurement Of Magnetic Fluctuations By O-X Mode Conversion, L. L. Vahala, G. Vahala, N. Bretz

Electrical & Computer Engineering Faculty Publications

The possibility of measuring magnetic fluctuations in a fusion plasma is considered by examining the O→X mode conversion. Under certain conditions and with good angular resolution, this mode conversion can be attributed to the presence of magnetic fluctuations even though the level of these fluctuations is much lower than that of density fluctuations. Some nonideal effects such as mode polarization mismatch at the plasma edge are also discussed.

Application Of The Results Of Carbon Pellet Modeling To The Problem Of Plasma Penetration, L. L. Vahala, A. G. El Cashlan, G. A. Gerdin, P. B. Parks

Electrical & Computer Engineering Faculty Publications

The assumptions of the evaporation model for low-Z pellets interacting with magnetic fusion plasmas developed by Parks are tested. These assumptions are that the vapor density profile in the region adjacent to the pellet surface falls off with radial distance as r^-α , where 5 <α<6, and that the ionization time for the transition between charge states ז_f (i.e., for r < ~3 sonic radii). The first assumption is tested by solving a two-parameter eigenvalue problem for the evaporation cloud in the region interior to the sonic radius; the results are found to be consistent with the low-Z evaporation model. The second assumption, that ז_zi «ז_f, is tested at the sonic radius using the results from atomic physics and the low-Z evaporation model. It is found that indeed ז_zi «ז_f for plasmas with parameters close to thermonuclear conditions (e.g. CIT), but not for those of smaller Tokamaks such as …

Influence Of Copper Doping On The Performance Of Optically Controlled Gaas Switches, St. T. Ko, V. K. Lakdawala, K. H. Schoenbach, M. S. Mazzola

Electrical & Computer Engineering Faculty Publications

The influence of the copper concentration in silicon-doped gallium arsenide on the photoionization and photoquenching of charge carriers was studied both experimentally and theoretically. The studies indicate that the compensation ratio (N_Cu/N_Si) is an important parameter for the GaAs:Si:Cu switch systems with regard to the turn-on and turn-off performance. The optimum copper concentration for the use of GaAs:Si:Cu as an optically controlled closing and opening switch is determined.