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Full-Text Articles in Physics

Synthesis And Assembly Of Polymer Materials At Interfaces, Xiaoshuang Wei Oct 2022

Synthesis And Assembly Of Polymer Materials At Interfaces, Xiaoshuang Wei

Doctoral Dissertations

The overarching goal of the thesis is to understand growth and assembly of polymer materials at interfaces. Chapter 2 and Chapter 3 study simultaneous polymer growth and assembly at fluid interfaces, where in-situ photopolymerization and vapor phase deposition were utilized to grow polymers, respectively. Chapter 4 leverages capillary condensation to pattern polymer growth at solid substrates. Chapter 1 provides background information on polymer materials at interfaces, and vapor phase deposition method (initiated chemical vapor deposition, iCVD) to grow polymers. This chapter also reviews polymer thin film wetting, and colloidal assemblies at interfaces. In Chapter 2, we demonstrate the preparation …


Measuring The Double Layer Capacitance Of Electrolyte Solutions Using A Graphene Field Effect Transistor, Agatha Ulibarri May 2018

Measuring The Double Layer Capacitance Of Electrolyte Solutions Using A Graphene Field Effect Transistor, Agatha Ulibarri

Senior Theses

When operating graphene field effect transistors (GFETs) in fluid, a double layer capacitance (Cdl) is formed at the surface. In the literature, the Cdl is estimated using values obtained using metal electrode experiments. Due to the distinctive electronic and surface properties of graphene, there is reason to believe these estimates are inadequate. This work seeks to directly characterize the double layer capacitance of a GFET. A unique method for determining the Cdl has been implemented, and data has been obtained for three electrolytes and one ionic fluid. The results yield dramatically lower Cdl values than …


Epitaxial Growth Of Silicon On Poly-Crystalline Si Seed Layer At Low Temperature By Using Hot Wire Chemical Vapor Deposition, Manal Abdullah Aldawsari May 2015

Epitaxial Growth Of Silicon On Poly-Crystalline Si Seed Layer At Low Temperature By Using Hot Wire Chemical Vapor Deposition, Manal Abdullah Aldawsari

Graduate Theses and Dissertations

There has been a growing interest in using low cost material as a substrate for the large grained polycrystalline silicon photovoltaic devices. The main property of those devices is the potential of obtaining high efficiency similar to crystalline Si devices efficiency yet at much lower cost because of the thin film techniques. Epitaxial growth of Si at low temperatures on low cost large grained seed layers, prepared by aluminum induced crystallization method (AIC), using hot wire chemical vapor deposition (HWCVD) system is investigated in this thesis. In this work, different parameters have been studied in order to optimize the growth …


Metal Oxide Growth, Spin Precession Measurements And Raman Spectroscopy Of Cvd Graphene, Akitomo Matsubayashi Jan 2014

Metal Oxide Growth, Spin Precession Measurements And Raman Spectroscopy Of Cvd Graphene, Akitomo Matsubayashi

Legacy Theses & Dissertations (2009 - 2024)

The focus of this dissertation is to explore the possibility of wafer scale graphene-based spintronics. Graphene is a single atomic layer of sp2 bonded carbon atoms that has attracted much attention as a new type of electronic material due to its high carrier mobilities, superior mechanical properties and extremely high thermal conductivity. In addition, it has become an attractive material for use in spintronic devices owing to its long electron spin relaxation time at room temperature. This arises in part from its low spin-orbit coupling and negligible nuclear hyperfine interaction. In order to realize wafer scale graphene spintronics, utilization of …


Use Of Ultra High Vacuum Plasma Enhanced Chemical Vapor Deposition For Graphene Fabrication, Shannen Adcock May 2012

Use Of Ultra High Vacuum Plasma Enhanced Chemical Vapor Deposition For Graphene Fabrication, Shannen Adcock

Graduate Theses and Dissertations

Graphene, what some are terming the "new silicon", has the possibility of revolutionizing technology through nanoscale design processes. Fabrication of graphene for device processing is limited largely by the temperatures used in conventional deposition. High temperatures are detrimental to device design where many different materials may be present. For this reason, graphene synthesis at low temperatures using plasma-enhanced chemical vapor deposition is the subject of much research. In this thesis, a tool for ultra-high vacuum plasma-enhanced chemical vapor deposition (UHV-PECVD) and accompanying subsystems, such as control systems and alarms, are designed and implemented to be used in future graphene growths. …


Photoluminescence Study Of Gallium Arsenide, Aluminum Gallium Arsenide, And Gallium Antimonide Thin Films Grown By Metalorganic Chemical Vapor Deposition, John Mark Koons Jan 1994

Photoluminescence Study Of Gallium Arsenide, Aluminum Gallium Arsenide, And Gallium Antimonide Thin Films Grown By Metalorganic Chemical Vapor Deposition, John Mark Koons

Theses

The photoluminescence produced by four MOCVD grown epitaxial thin film samples was studied to give insight into sample quality. The four samples under this study were GaAs on a GaAs substrate, Al.25Ga.75As on a GaAs substrate, Al.30Ga.7OAs on a GaAs substrate, and GaSb on a GaSb substrate. Excitation was achieved through the use of the 514.0 nm line of an argon ion laser, and sample cooling was attained by use of a cryostat cooler using helium gas to attain a low temperature limit of 10°K. The GaAs and Al.30Ga.7O …