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Full-Text Articles in Physics

Transient Lattice Deformations Of Crystals Studied By Means Of Ultrafast Time-Resolved X-Ray And Electron Diffraction, Runze Li, Kyle Sundqvist, Jie Chen, H. E. Elsayed-Ali, Jie Zhang, Peter M. Rentzepis Jan 2018

Transient Lattice Deformations Of Crystals Studied By Means Of Ultrafast Time-Resolved X-Ray And Electron Diffraction, Runze Li, Kyle Sundqvist, Jie Chen, H. E. Elsayed-Ali, Jie Zhang, Peter M. Rentzepis

Electrical & Computer Engineering Faculty Publications

Ultrafast lattice deformation of tens to hundreds of nanometer thick metallic crystals, after femtosecond laser excitation, was measured directly using 8.04 keV subpicosecond x-ray and 59 keV femtosecond electron pulses. Coherent phonons were generated in both single crystal and polycrystalline films. Lattice compression was observed within the first few picoseconds after laser irradiation in single crystal aluminum, which was attributed to the generation of a blast force and the propagation of elastic waves. The different time scales of lattice heating for tens and hundreds nanometer thick films are clearly distinguished by electron and x-ray pulse diffraction. The electron and lattice …


Electron Diffraction Study Of Cobalt-Rich Hf-Co, Xingzhong Li, Yunlong Jin, Jeffrey E. Shield, Ralph Skomski, David J. Sellmyer Jan 2016

Electron Diffraction Study Of Cobalt-Rich Hf-Co, Xingzhong Li, Yunlong Jin, Jeffrey E. Shield, Ralph Skomski, David J. Sellmyer

Nebraska Center for Materials and Nanoscience: Faculty Publications

Intermetallic compounds having compositions from HfCo4 to HfCo8 were investigated by transmission electron microscopy, selected-area electron diffraction, and energy-dispersive x-ray spectroscopy. A major crystalline phase, closely related to the orthorhombic Zr2Co11 phase in structure, has been observed in the samples with the composition ranges from HfCo6 to HfCo8. The phase, referred to as either Hf2Co11 or HfCo7 phase in the literature, is actually one common phase, having a broad composition range and referred to as μ-phase in the present paper. In addition to the μ-phase, we …


Orthorhombic Zr2Co11 Phase Revisited, Xingzhong Li, Wenyong Zhang, David J. Sellmyer, X Zhao, M C. Nguyen, C Z. Wang, K M. Ho Jan 2014

Orthorhombic Zr2Co11 Phase Revisited, Xingzhong Li, Wenyong Zhang, David J. Sellmyer, X Zhao, M C. Nguyen, C Z. Wang, K M. Ho

David Sellmyer Publications

The structure of the orthorhombic Zr2Co11 phase was revisited in the present work. Selected-area electron diffraction (SAED) and high-resolution electron microscopy (HREM) techniques were used to investigate the structure. They show the orthorhombic Zr2Co11 phase has a 1-D incommensurate modulated structure. The structure can be approximately described as a B-centered orthorhombic lattice. The lattice parameters of the orthorhombic Zr2Co11 phase have been determined by a tilt series of SAED patterns. A hexagonal network with a modulation wave has been observed in the HREM image and the hexagonal motif is considered as …


Anisotropic Response Of Nanosized Bismuth Films Upon Femtosecond Laser Excitation Monitored By Ultrafast Electron Diffraction, Ahmed R. Esmail, Hani E. Elsayed-Ali Jan 2011

Anisotropic Response Of Nanosized Bismuth Films Upon Femtosecond Laser Excitation Monitored By Ultrafast Electron Diffraction, Ahmed R. Esmail, Hani E. Elsayed-Ali

Electrical & Computer Engineering Faculty Publications

The lattice response of 5 nm thick bismuth film to femtosecond laser excitation is probed by ultrafast electron diffraction. The transient decay time after laser excitation is greater for diffraction from (012) lattice planes compared to (110) planes and is reduced for both planes with the increased laser fluence. These results indicate that different energy coupling mechanisms to the lattice occur depending on the crystal direction. The behavior of the diffraction peak width indicates partial disorder of the film upon photoexcitation that increases together with the laser fluence. © 2011 American Institute of Physics. [doi:10.1063/1.3652919]


Picosecond Electron Diffraction From Molecules Aligned By Dissociation, Martin Centurion, Peter Reckenthaeler, Ferenc Krausz, Ernst E. Fill Jan 2010

Picosecond Electron Diffraction From Molecules Aligned By Dissociation, Martin Centurion, Peter Reckenthaeler, Ferenc Krausz, Ernst E. Fill

Martin Centurion Publications

In gas electron diffraction an averaging over statistical directions of the molecules takes place. This results in diffraction patterns in the form of isotropic rings which yield information only on the radial distribution function displaying the inter-atomic distances. We demonstrate that by dissociating molecules with linearly polarized light the pattern becomes anisotropic. In the experiments the iodide C2F4I2 is dissociated and molecular difference intensities and difference radial distribution curves are measured for directions parallel and perpendicular to the direction of polarization. With picosecond temporal resolution the curves clearly demonstrate transient anisotropy and its decay by …


Stress Evolution In Nanocrystalline Diamond Films Produced By Chemical Vapor Deposition, Hao Li, Brian W. Sheldon, Abhishek Kothari, Zhigang Ban, Barbara L. Walden Nov 2006

Stress Evolution In Nanocrystalline Diamond Films Produced By Chemical Vapor Deposition, Hao Li, Brian W. Sheldon, Abhishek Kothari, Zhigang Ban, Barbara L. Walden

Faculty Scholarship

Nanocrystalline diamond films were grown on silicon substrates by microwave plasma enhanced chemical vapor deposition with 1% methane, 2%–10% hydrogen, and argon. High resolution transmission electron microscope images and selected area electron diffraction patterns confirm that the films consist of 10–20 nm sized diamond grains. The residual and intrinsic stresses were investigated using wafer curvature. Intrinsic stresses were always tensile, with higher H2 concentrations generally leading to higher stresses. Annealing the films in a hydrogen plasma significantly increased these stresses. These hydrogen induced changes also appear to alter stress levels and stress gradients during the growth process itself. Raman …


Growth Of Ge Quantum Dots On Si(100)-(2×1) By Pulsed Laser Deposition, M. S. Hegazy, H. E. Elsayed-Ali Jan 2006

Growth Of Ge Quantum Dots On Si(100)-(2×1) By Pulsed Laser Deposition, M. S. Hegazy, H. E. Elsayed-Ali

Electrical & Computer Engineering Faculty Publications

Self-assembled germanium quantum dots (QDs) were grown on Si(100)-(2×1) by pulsed laser deposition. In situ reflection-high energy electron diffraction (RHEED) and postdeposition atomic force microscopy are used to study the growth of the QDs. Several films of different thicknesses were grown at a substrate temperature of 400 °C using a Q-switched Nd:yttrium aluminum garnet laser (λ= 1064 nm, 40 ns pulse width, 23 J/cm 2 fluence, and 10 Hz repetition rate). At low film thicknesses, hut clusters that are faceted by different planes, depending on their height, are observed after the completion of the wetting layer. With increasing film thickness, …


Condensation On (002) Graphite Of Liquid Bismuth Far Below Its Bulk Melting Point, M. K. Zayed, H. E. Elsayed-Ali Jan 2005

Condensation On (002) Graphite Of Liquid Bismuth Far Below Its Bulk Melting Point, M. K. Zayed, H. E. Elsayed-Ali

Electrical & Computer Engineering Faculty Publications

Condensation of thermally evaporated Bi on (002) graphite, at temperatures of 300-523K, was studied using in situ reflection high-energy electron diffraction (RHEED) and room temperature ex situ atomic force microscopy (AFM). For deposition at temperatures below 415±5K, transmission RHEED patterns of Bi appeared at an average thickness of ∼0.5 monolayer (ML). AFM images showed that the film consisted of crystallites in the shape of triangular step pyramids with step heights corresponding to single and double Bi layers in the [111] direction. This morphology indicates crystallization from the vapor. For deposition at higher temperatures, diffuse RHEED patterns appeared independent of the …


Self-Assembly Of Ge Quantum Dots On Si(100)- 2×1 By Pulsed Laser Deposition, M. S. Hegazy, H. E. Elsayed-Ali Jan 2005

Self-Assembly Of Ge Quantum Dots On Si(100)- 2×1 By Pulsed Laser Deposition, M. S. Hegazy, H. E. Elsayed-Ali

Electrical & Computer Engineering Faculty Publications

Self-assembled Ge quantum dots are grown on Si(100)- 2×1 by pulsed laser deposition. The growth is studied by in situ reflection high-energy electron diffraction and postdeposition atomic force microscopy. After the completion of the wetting layer, transient hut clusters, faceted by different planes, are observed. When the height of these clusters exceeded a certain value, the facets developed into {305} planes. Some of these huts become {305}-faceted pyramids as the film mean thickness was increased. With further thickness increase, dome clusters developed on the expense of these pyramids. © 2005 American Institute of Physics. [DOI: 10.1063/1.1949285]


Structural Order And Disorder In Co-Based Layered Cuprates Cosr2(Y,Ce)Scu2o5+2s (S=1-3), T. Nagai, V. P.S. Awana, E. Takayama-Muromachi, A. Yamazaki, M. Karppinen, H. Yamauchi, S. K. Malik, William B. Yelon, Y. Matsui Nov 2003

Structural Order And Disorder In Co-Based Layered Cuprates Cosr2(Y,Ce)Scu2o5+2s (S=1-3), T. Nagai, V. P.S. Awana, E. Takayama-Muromachi, A. Yamazaki, M. Karppinen, H. Yamauchi, S. K. Malik, William B. Yelon, Y. Matsui

Physics Faculty Research & Creative Works

Crystal structures of a homologous series of Co-Based layered cuprates, CoSr2(Y,Ce)sCu2O5+2s (s=1-3), have been investigated by high-resolution electron microscopy (HREM) and electron diffraction (ED) techniques. for all the three phases ED patterns showed double periodicity along a direction parallel to the CoO layers, indicating a regular alternation of two types of CoO4- tetrahedra chains within the layers. Also seen was ordering of the chains along the layer-stacking direction for the s=1 phase (Co-1212); ED patterns simulated based on the proposed superstructure model well reproduced the observed patterns. for the s=2 (Co-1222) and …


Atomic Hydrogen Cleaning Of Inp(100): Electron Yield And Surface Morphology Of Negative Electron Affinity Activated Surfaces, M. A. Hafez, H. E. Elsayed-Ali Jan 2002

Atomic Hydrogen Cleaning Of Inp(100): Electron Yield And Surface Morphology Of Negative Electron Affinity Activated Surfaces, M. A. Hafez, H. E. Elsayed-Ali

Electrical & Computer Engineering Faculty Publications

Atomic hydrogen cleaning of the InP(100) surface has been investigated using quantitative reflection high-energy electron diffraction. The quantum efficiency of the surface when activated to negative electron affinity was correlated with surface morphology. The electron diffraction patterns showed that hydrogen cleaning is effective in removing surface contaminants, leaving a clean, ordered, and (2×4)-reconstructed surface. After activation to negative electron affinity, a quantum efficiency of ∼6% was produced in response to photoactivation at 632 nm. Secondary electron emission from the hydrogen-cleaned InP(100)-(2×4) surface was measured and correlated to the quantum efficiency. The morphology of the vicinal InP(100) surface was investigated using …


Electron Pulse Broadening Due To Space Charge Effects In A Photoelectron Gun For Electron Diffraction And Streak Camera Systems, Bao-Liang Qian, Hani E. Elsayed-Ali Jan 2002

Electron Pulse Broadening Due To Space Charge Effects In A Photoelectron Gun For Electron Diffraction And Streak Camera Systems, Bao-Liang Qian, Hani E. Elsayed-Ali

Electrical & Computer Engineering Faculty Publications

The electron pulse broadening and energy spread, caused by space charge effects, in a photoelectron gun are studied analytically using a fluid model. The model is applicable in both the photocathode-to-mesh region and the postanode electron drift region. It is found that space charge effects in the photocathode-to-mesh region are generally unimportant even for subpicosecond pulses. However, because of the long drift distance, electron pulse broadening due to space charge effects in the drift region is usually significant and could be much larger than the initial electron pulse duration for a subpicosecond electron pulse. Space charge effects can also lead …


Acceleration Element For Femtosecond Electron Pulse Compression, Bao-Liang Qian, Hani E. Elsayed-Ali Jan 2002

Acceleration Element For Femtosecond Electron Pulse Compression, Bao-Liang Qian, Hani E. Elsayed-Ali

Electrical & Computer Engineering Faculty Publications

An acceleration element is proposed for compressing the electron pulse duration in a femtosecond photoelectron gun. The element is a compact metal cavity with curved-shaped walls. An external voltage is applied to the cavity where a special electric field forms in such a way that the slow electrons in the electron pulse front are accelerated more than the fast electrons, and consequently the electron pulse duration will be compressed. The distribution of the electric field inside the acceleration cavity is analyzed for the geometry of the cavity. The electron dynamics in this acceleration cavity is also investigated numerically. Numerical results …


Time-Resolved Structural Study Of Low-Index Surfaces Of Germanium Near Its Bulk Melting Temperature, Xinglin Zeng, H. E. Elsayed-Ali Jan 2001

Time-Resolved Structural Study Of Low-Index Surfaces Of Germanium Near Its Bulk Melting Temperature, Xinglin Zeng, H. E. Elsayed-Ali

Electrical & Computer Engineering Faculty Publications

The structure of the low-index surfaces of germanium near its bulk melting temperature is investigated using 100-ps time-resolved reflection high-energy electron diffraction. The surface is heated by 100-ps laser pulses while a synchronized electron beam probes the structure. Ge(111)was observed to remain in its incomplete melting structure up to at least Tm + 134 ± 40 K when heated by a 100-ps laser pulse. Both the Ge(100) and Ge(110) surfaces are observed to melt near the bulk melting temperature when heated with 100-ps laser pulses. Because of the low-diffraction intensity-to-background ratio at high temperatures and because of the temperature …


Time-Resolved Reflection High-Energy Electron Diffraction Study Of The Ge(111)-C(2×8)-(1×1) Phase Transition, Xinglin Zeng, Bo Lin, Ibrahim El-Kholy, Hani E. Elsayed-Ali Jan 1999

Time-Resolved Reflection High-Energy Electron Diffraction Study Of The Ge(111)-C(2×8)-(1×1) Phase Transition, Xinglin Zeng, Bo Lin, Ibrahim El-Kholy, Hani E. Elsayed-Ali

Electrical & Computer Engineering Faculty Publications

The dynamics of the Ge(111)-c(2×8)-(1×1) phase transition is investigated by 100-ps time-resolved reflection high-energy electron diffraction. A laser pulse heats the surface while a synchronized electron pulse is used to obtain the surface diffraction pattern. Slow heating shows that the adatoms in Ge(111)-c(2×8) start to disorder at ∼510 K and are converted to a disordered adatom arrangement at 573 K. For heating with 100-ps laser pulses, the Ge(111)-c(2×8) reconstructed adatom arrangement starts to disorder at 584±16K, well above the onset temperature of ∼510 K for the disordering of Ge(111)-c(2×8) observed for slow …


Surface Morphology Of Laser-Superheated Pb(111) And Pb(100), Z. H. Zhang, Bo Lin, X. L. Zeng, H. E. Elsayed-Ali Jan 1998

Surface Morphology Of Laser-Superheated Pb(111) And Pb(100), Z. H. Zhang, Bo Lin, X. L. Zeng, H. E. Elsayed-Ali

Electrical & Computer Engineering Faculty Publications

The surface step density on the vicinal Pb(111) and the surface vacancy density on Pb(100) after laser superheating and melting are investigated using reflection high-energy electron diffraction. With ∼100-ps laser pulses, Pb(111) surface superheating does not significantly change the density of the steps and step-edge roughness. However, after laser surface melting, the average terrace width and the string length at the step edge become as large as those at room temperature. The average terrace width at 573 K changes from 38±15 to 64±19 Å after laser surface melting, while the average string length at the step edge changes from 90±14 …


Temperature Dependence Of Step Density On Vicinal Pb(111), Z. H. Zhang, H. E. Elsayed-Ali Jan 1998

Temperature Dependence Of Step Density On Vicinal Pb(111), Z. H. Zhang, H. E. Elsayed-Ali

Electrical & Computer Engineering Faculty Publications

The temperature dependence of step density on the vicinal Pb(111) surface is investigated using reflection high-energy electron diffraction. When the temperature is increased from 323 to 590 K. the average terrace width and the average string length at the step edge decrease from 85±25 to 37±16 Å and from 220±33 to 25±8 Å, respectively. Thermal step collapse on the Pb(111) surface near its bulk melting temperature is not observed. Above 530±7 K, the change in the string length at the step edge with temperature becomes small, and the intensity of the (00) beam is significantly decreased. We conclude that partial …


Reflection High-Energy Electron-Diffraction Study Of Melting And Solidification Of Pb On Graphite, Z. H. Zhang, P. Kulatunga, H. E. Elsayed-Ali Jan 1997

Reflection High-Energy Electron-Diffraction Study Of Melting And Solidification Of Pb On Graphite, Z. H. Zhang, P. Kulatunga, H. E. Elsayed-Ali

Electrical & Computer Engineering Faculty Publications

The melting and solidification of Pb thin films on pyrolytic graphite are investigated in situ by reflection high-energy electron diffraction. Thin films with thicknesses of 4-150 monolayers are investigated. The surface morphology of the thin films were studied by scanning electron microscopy. Superheating of the Pb thin films by 4±2 to 12±2 K is observed from diffraction intensity measurements. Upon cooling the substrate, the Pb on graphite is seen to supercool by ∼69±4 K.