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2002

Copper

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Full-Text Articles in Physics

Magnetization Reversal Of Elliptical Co/Cu/Co Pseudo-Spin Valve Dots, Ngocnga Dao, Scott L. Whittenburg, Y. Hao, Leszek M. Malkinski, Jian Qing Wang, C. A. Ross May 2002

Magnetization Reversal Of Elliptical Co/Cu/Co Pseudo-Spin Valve Dots, Ngocnga Dao, Scott L. Whittenburg, Y. Hao, Leszek M. Malkinski, Jian Qing Wang, C. A. Ross

Chemistry and Biochemistry Faculty Publications

We present our recent simulated results on Cr (5 nm)/ Cu (5 nm)/ Co (5 nm)/ Cu (3 nm)/ Co (2 nm) pseudo-spin valve dots. The simulated results agree qualitatively with the experimental results. Three different sizes of elliptical dots, and were simulated. Our simulations show that in these types of dots magnetization reversal occurs by the formation of domain walls: for and for No domain wall was observed in the reversal of the dots. For such dots, the simulated loops show a small two-step reversal pattern with the thin upper layer partially reversing followed by complete reversal of both …

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High-Efficiency Solar Cells Based On Cu(Inal)Se[Sub 2] Thin Films, S. Marsillac, P. D. Paulson, M. W. Haimbodi, R. W. Birkmire, W. N. Shafarman Jan 2002

High-Efficiency Solar Cells Based On Cu(Inal)Se[Sub 2] Thin Films, S. Marsillac, P. D. Paulson, M. W. Haimbodi, R. W. Birkmire, W. N. Shafarman

Electrical & Computer Engineering Faculty Publications

A Cu(InAl)Se2solar cell with 16.9% efficiency is demonstrated using a Cu(InAl)Se2thin film deposited by four-source elemental evaporation and a device structure of glass/Mo/Cu(InAl)Se2/CdS/ZnO/indium tin oxide/(Ni/Algrid)/MgF2. A key to high efficiency is improved adhesion between the Cu(InAl)Se2 and the Mo back contact layer, provided by a 5-nm-thick Ga interlayer, which enabled the Cu(InAl)Se2 to be deposited at a 530 °C substrate temperature. Film and device properties are compared to Cu(InGa)Se2 with the same band gap of 1.16 eV. The solar cells have similar behavior, with performance limited by recombination through …

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