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Crystal Field Splitting And Charge Flow In The Buckled-Dimer Reconstruction Of Si(100)—2× 1, G. K. Wertheim, D. Mark Riffe, J. E. Rowe, P. H. Citrin
Crystal Field Splitting And Charge Flow In The Buckled-Dimer Reconstruction Of Si(100)—2× 1, G. K. Wertheim, D. Mark Riffe, J. E. Rowe, P. H. Citrin
All Physics Faculty Publications
The effect of the 2×1 reconstruction on the core-electron binding energies of the outermost Si(100) layers has been determined using high-resolution photoemission data. A previously unobserved 190-meV crystal-field splitting is resolved for the up-atoms of the asymmetric surface dimers, whose average core-level shift is -400 meV. The signal from the down-atoms is clearly identified and has a shift of +220 meV. These new findings indicate a charge flow of ∼0.05e from the subsurface to the surface layers, with a substantially larger difference of ∼0.34e between the up-atoms and down-atoms in the dimer.
Silicon (2p) Surface Core-Level Line Shape Of Si(111)—B, J. E. Rowe, G. K. Wertheim, D. Mark Riffe
Silicon (2p) Surface Core-Level Line Shape Of Si(111)—B, J. E. Rowe, G. K. Wertheim, D. Mark Riffe
All Physics Faculty Publications
Several recent structural studies of the Si(111)–B ((3)1/2×(3)1/2) surface have established that the boron atoms occupy substitutional sites in the second full Si layer and have Si adatoms directly above them. High‐resolution (∼80–100 meV) Si(2p) core‐level photoemission was used to determine the B‐induced perturbation of the surface Si atoms. The samples were prepared by surface segregation from Si(111) wafers (∼1.5 at. % B) after thermally removing the thin protective oxide layer on the surface. Photoemission spectra for photon energies from 110 to 140 eV show three peaks, indicative of at least two well‐separated spin‐orbit …