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Two-Dimensional Mos_2 As A New Material For Electronic Devices, Natalia Izyumskaya, Denis O. Demchenko, Vitaliy Avrutin, Ümi̇t Özgür, Hadis Morkoç
Two-Dimensional Mos_2 As A New Material For Electronic Devices, Natalia Izyumskaya, Denis O. Demchenko, Vitaliy Avrutin, Ümi̇t Özgür, Hadis Morkoç
Turkish Journal of Physics
We overview fundamental properties, preparation techniques, and potential device applications of single- and few-monolayer-thick molybdenum disulfide MoS_2 belonging to a new emerging class of materials: 2-dimensional semiconductors. To a large extent, the interest in the 2-dimensional materials is fueled by the quest for alternatives to graphene, which is hardly suitable for electronic devices because of the lack of a band gap. A unique combination of physical properties, including flexibility, high electron mobility, and optical transparency combined with a large band gap tunable from indirect 1.2 eV for bulk to direct 1.9 eV for a monolayer, make MoS_2 attractive for a …
Thermochemical And Green Luminescence Analysis Of Zinc Oxide Thin Films Grown On Sapphire By Chemical Vapor Deposition, Abdelkader Djelloul, R. A. Rabadanov
Thermochemical And Green Luminescence Analysis Of Zinc Oxide Thin Films Grown On Sapphire By Chemical Vapor Deposition, Abdelkader Djelloul, R. A. Rabadanov
Turkish Journal of Physics
This study has been carried out to detail an integral thermochemical analysis of the principal reaction in the production of zinc oxide (ZnO) thin films, including developing an analytical form of the equilibrium constant. Zinc oxide thin films prepared by chemical vapor deposition have been studied in terms of deposition time and substrate temperature. The growth of the single-crystal films present two regimes depending on the substrate temperature, with increasing constant growth rates at lower, and higher, temperature ranges, respectively. Growth rates above 6 \mu m \cdot min^{-1} can be achieved at T_s = 880 K. The variation of the …