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Photoluminescence Study Of Gan Implanted With Erbium And Erbium-Oxygen, Lori R. Everitt
Photoluminescence Study Of Gan Implanted With Erbium And Erbium-Oxygen, Lori R. Everitt
Theses and Dissertations
Erbium emits at 1540 nm, which propagates well through fiber optic cables. This work studies the photoluminescence (PL) from GaN, GaN implanted with Er alone, and GaN implanted with both Er and O as functions of excitation laser energy and sample temperature. When the exciton bound to a neutral donor recombined, a photon was emitted at 3.47 eV. A photon emitted at 3.457 eV may have been evidence of the recombination of an exciton bound to a neutral acceptor. Second, the Er-ion transitions were observed in two groups around 0.805 and 1.25 eV. The PL intensity was measured at four …
Photoluminescence And Electroluminescence Of Erbium And Neodymium Implanted Semiconductors, James R. Hunter
Photoluminescence And Electroluminescence Of Erbium And Neodymium Implanted Semiconductors, James R. Hunter
Theses and Dissertations
Low temperature photoluminescence (PL) and electroluminescence (EL) measurements were used to study the excitation of erbium- and neodymium-implanted GaAs and AlxGa1-xAs (x=0. 1, 0.3) pn-junctions. The rare-earth (RE) emissions were investigated as a function of ion dose, aluminum mole fraction, laser excitation power, and applied forward bias voltage for the implanted samples. Low temperature PL was also measured from Er doped silicon grown by the metalorganic chemical vapor-phase deposition (MOCVD) method using various growth parameters.. The MOCVD-grown Si samples were studied as a function of metalorganic source temperature, silane (SiH4) flow, growth time, and …