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Full-Text Articles in Physics
Heterostructure Of 2d Materials: Hfs2/Hfo2/Si, Christopher J. Robledo
Heterostructure Of 2d Materials: Hfs2/Hfo2/Si, Christopher J. Robledo
MSU Graduate Theses
Heterostructures have been utilized in electronic devices for over 50 years with the proposal for the first heterostructure transistor in 1957. With the scaling of devices, it is necessary to create new heterostructures that will comply with Moore’s Law, as well as make devices faster and consume less power. Novel 2D materials, such as hafnium disulfide, have shown promise as an active channel layer, while hafnium dioxide is already proven to be a replacement of silicon dioxide for the gate insulating layer. However, fabrication techniques for wide-scale integration of these heterostructures have not yet been achieved. Also, the dielectric properties …
Investigation Of Mnxni1-Xo Thin Films Using Pulsed Laser Deposition, Md Ashif Anwar
Investigation Of Mnxni1-Xo Thin Films Using Pulsed Laser Deposition, Md Ashif Anwar
MSU Graduate Theses
The exchange bias (EB) effect, especially in nanomaterials, is highly promising for use in antiferromagnet-based spintronics applications. NiO is a well known antiferromagnetic material with a high Néel temperature (525K) and can exhibit ferromagnetism/ ferrimagnetism by adding other magnetic transition elements. Our previous work has shown that the antiferromagnetic characteristics of conventional NiO insulating nanostructured material can be altered to have substantial ferrimagnetic characteristics by doping NiO with Mn or Co. Pulsed laser deposition (PLD) was used to grow heterostructures comprised of a nanostructured thin NiO film deposited on the surface of a MgO (100) and Al2O3 …