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Full-Text Articles in Physics
Deep Donors And Acceptors In Β-Ga2O3 Crystals: Determination Of The Fe2+/3+ Level By A Noncontact Method, Christopher A. Lenyk, Trevor A . Gustafson, Larry E. Halliburton, Nancy C. Giles
Deep Donors And Acceptors In Β-Ga2O3 Crystals: Determination Of The Fe2+/3+ Level By A Noncontact Method, Christopher A. Lenyk, Trevor A . Gustafson, Larry E. Halliburton, Nancy C. Giles
Faculty Publications
Electron paramagnetic resonance (EPR), infrared absorption, and thermoluminescence (TL) are used to determine the Fe2+/3+ level in Fe-doped β-Ga2O3 crystals. With these noncontact spectroscopy methods, a value of 0.84 ± 0.05 eV below the conduction band is obtained for this level. Our results clearly establish that the E2 level observed in deep level transient spectroscopy (DLTS) experiments is due to the thermal release of electrons from Fe2+ ions. The crystals used in this investigation were grown by the Czochralski method and contained large concentrations of Fe acceptors and Ir donors, and trace amounts of Cr …
Copper-Doped Lithium Triborate (Lib3o5) Crystals: A Photoluminescence, Thermoluminescence, And Electron Paramagnetic Resonance Study, Brant E. Kananen, John W. Mcclory, Nancy C. Giles, Larry E. Halliburton
Copper-Doped Lithium Triborate (Lib3o5) Crystals: A Photoluminescence, Thermoluminescence, And Electron Paramagnetic Resonance Study, Brant E. Kananen, John W. Mcclory, Nancy C. Giles, Larry E. Halliburton
Faculty Publications
When doped with copper ions, lithium borate materials are candidates for use in radiation dosimeters. Copper-doped lithium tetraborate (Li2B4O7) crystals have been widely studied, but little is known thus far about copper ions in lithium triborate (LiB3O5) crystals. In the present investigation, Cu+ ions (3d10) were diffused into an undoped LiB3O5 crystal at high temperature. These ions occupy both Li+ and interstitial positions in the crystal. A photoluminescence (PL) band peaking near 387 nm and a photoluminescence excitation (PLE) band peaking near 273 nm verify that a portion of these Cu+ ions are located at regular Li+ sites. After an …
Direct Bandgap Cross-Over Point Of Ge1-YSnY Grown On Si Estimated Through Temperature-Dependent Photoluminescence Studies, Thomas R. Harris, Mee-Yi Ryu, Yung Kee Yeo, Buguo Wang, C. L. Senaratne
Direct Bandgap Cross-Over Point Of Ge1-YSnY Grown On Si Estimated Through Temperature-Dependent Photoluminescence Studies, Thomas R. Harris, Mee-Yi Ryu, Yung Kee Yeo, Buguo Wang, C. L. Senaratne
Faculty Publications
Epitaxial Ge1-ySny (y = 0%–7.5%) alloys grown on either Si or Ge-buffered Si substrates by chemical vapor deposition were studied as a function of Sn content using temperature-dependent photoluminescence (PL). PL emission peaks from both the direct bandgap (Γ-valley) and the indirect bandgap (L-valley) to the valence band (denoted by ED and EID, respectively) were clearly observed at 125 and 175 K for most Ge1-ySny samples studied. At 300 K, however, all of the samples exhibited dominant ED emission with either very weak or no measureable EID emission. At 10 K, …
Fluorescence Measurements Of Expanding Strongly Coupled Neutral Plasmas, E. A. Cummings, J. E. Daily, Dallin S. Durfee, Scott D. Bergeson
Fluorescence Measurements Of Expanding Strongly Coupled Neutral Plasmas, E. A. Cummings, J. E. Daily, Dallin S. Durfee, Scott D. Bergeson
Faculty Publications
We report new detailed density profile measurements in expanding strongly coupled neutral calcium plasmas. Using laser-induced fluorescence techniques, we determine plasma densities in the range of 10^5 to 10^9 cm^-3 with a time resolution limit as small as 7 ns. Strong coupling in the plasma ions is inferred directly from the fluorescence signals. Evidence for strong coupling at late times is presented, confirming a recent theoretical result.
Microsecond Spin-Flip Times In N-Gaas Measured By Time-Resolved Polarization Of Photoluminescence, John S. Colton, T. A. Kennedy, A. S. Bracker, D. Gammon
Microsecond Spin-Flip Times In N-Gaas Measured By Time-Resolved Polarization Of Photoluminescence, John S. Colton, T. A. Kennedy, A. S. Bracker, D. Gammon
Faculty Publications
We have observed microsecond spin-flip times in lightly doped n-GaAs, by measuring the photoluminescence polarization in the time domain with pump and probe pulses. Times up to 1.4 μs have been measured. Our results as a function of magnetic field indicated three regions governing the spin relaxation: a low field region, where spin-flip times increase due to suppression of the nuclear hyperfine interaction for localized electrons, a medium field region where spin-flip times increase due to narrowing of the hyperfine relaxation for interacting electrons, and a high field region where spin-flip times begin to level off due to the increasing …
An Analysis Of Temperature Dependent Photoluminescence Line Shapes In Ingan, John S. Colton, K. L. Teo, P. Y. Yu, E. R. Weber, M. F. Li, W. Lui, K. Uchida, H. Tokunaga, N. Akutsu, K. Matsumoto
An Analysis Of Temperature Dependent Photoluminescence Line Shapes In Ingan, John S. Colton, K. L. Teo, P. Y. Yu, E. R. Weber, M. F. Li, W. Lui, K. Uchida, H. Tokunaga, N. Akutsu, K. Matsumoto
Faculty Publications
Photoluminescence (PL) line shapes in InGaN multiple quantum well structures have been studied experimentally and theoretically between 10 and 300 K. The higher temperature PL spectra can be fitted qualitatively with a thermalized carrier distribution and a broadened joint-density-of-states. The low temperature PL line shapes suggest that carriers are not thermalized, as a result of localization by band-gap fluctuations. We deduce a localization energy of ~7 meV as compared with an activation energy of ~63 meV from thermal quenching of the PL intensity. We thus conclude that this activation energy and the band-gap fluctuation most likely have different origins.
Mesostructure Of Photoluminescent Porous Silicon, David D. Allred, F. Ruiz, C. Vázquez-López, Jesus González-Hernández, G. Romero-Paredes, R. Peña-Sierra, G. Torres-Delgado
Mesostructure Of Photoluminescent Porous Silicon, David D. Allred, F. Ruiz, C. Vázquez-López, Jesus González-Hernández, G. Romero-Paredes, R. Peña-Sierra, G. Torres-Delgado
Faculty Publications
Scanning electron microscopy, atomic force microscopy, and Raman spectroscopy were used to characterize the microstructure of photoluminescent porous silicon (PS) layers formed by the anodic etching (HF:H2O:ethanol), at various current densities, of p-type (100) silicon wafers possessing resitivity in the range 1-2 Ω cm. Existing models for the origin of luminescence in PS are not supported by our observations. Cross-sectional as well as surface atomic force micrographs show the material to be clumpy rather than columnar; rodlike structures are not observed down to a scale of 40 nm. A three-dimensional model of the mesostructure of porous silicon is discussed. Room-temperature …
Photoluminescence And Absorption Studies Of Defects In Cdte And Znxcd1-Xte Crystals, Cheryl Barnett Davis, David D. Allred, A. Reyes-Mena, Jesus González-Hernández, Ovidio González, Bret C. Hess, Worth P. Allred
Photoluminescence And Absorption Studies Of Defects In Cdte And Znxcd1-Xte Crystals, Cheryl Barnett Davis, David D. Allred, A. Reyes-Mena, Jesus González-Hernández, Ovidio González, Bret C. Hess, Worth P. Allred
Faculty Publications
We have studied at cryogenic temperatures photoluminescence features which lie more than 0.15 eV below the band edge in ZnxCd1-xTe (0≤x≤0.09) crystals. The same features, namely a defect band which lies at about 0.13-0.20 eV below the band-gap energy and a peak at 1.1 eV, that are observed in pure CdTe samples are observed in these alloy materials. In annealed samples we observe that the 1.1 eV feature, which has been attributed to tellurium vacancies, increases with fast cooling. Increased concentrations of tellurium vacancies can be understood in terms of the phase diagram of CdTe which indicates that higher concentrations …
Structure And Optical Characterization Of Znxcd1-Xte Thin Films Prepared By The Close Spaced Vapor Transport Method, David D. Allred, Jesus González-Hernández, O. Zelaya, J. G. Mendoza-Alverez, E. López-Cruz, D. A. Pawlik
Structure And Optical Characterization Of Znxcd1-Xte Thin Films Prepared By The Close Spaced Vapor Transport Method, David D. Allred, Jesus González-Hernández, O. Zelaya, J. G. Mendoza-Alverez, E. López-Cruz, D. A. Pawlik
Faculty Publications
Zinc cadmium telluride (ZnxCd1-xTe) solid solution films with 0≤x≤0.12 were deposited by the close spaced vapor transport method and characterized using photoluminescence, x-ray diffraction, and scanning electron microscopy. The two former techniques indicate that films with high crystalline quality can be prepared with moderate substrate temperatures and low argon pressures. Under these conditions deposition rates of up to 1000 Å/s are achieved and Zn concentration in the film is the same as that of the source. The electron micrographs show grain sizes comparable to the film thickness.
Photoluminescence Studies In Znxcd1-Xte Single Crystals, David D. Allred, Jesus González-Hernández, Elías López-Cruz, Worth P. Allred
Photoluminescence Studies In Znxcd1-Xte Single Crystals, David D. Allred, Jesus González-Hernández, Elías López-Cruz, Worth P. Allred
Faculty Publications
The crystalline quality of ZnxCd1-xTe single crystals prepared by a modified Bridgman method with 0≤x≤0.05 has been analyzed using photoluminescence. The spectrum of a typical sample is dominated by lines originating from the recombination of free and bound excitons. Lines due to free excitons in their ground and first excited states are observed in both the pure CdTe and the mixed crystals. Excitons bound to Dc vacancies are observed in the pure CdTe crystal but not in the mixed crystal. Weaker and broader features appearing at energies below the exciton emission range were associated with transitions involving free-to-bound and bound-to-bound …
Annealing Behavior Of The Photoluminescence Lines In Cdte And Znx Cd1-X Te Single Crystals, David D. Allred, A. Reyes-Mena, Jesus González-Hernández, Elías López-Cruz, Worth P. Allred
Annealing Behavior Of The Photoluminescence Lines In Cdte And Znx Cd1-X Te Single Crystals, David D. Allred, A. Reyes-Mena, Jesus González-Hernández, Elías López-Cruz, Worth P. Allred
Faculty Publications
The main lines in the photoluminescence spectra of Zn1Cd1-xTe single crystals grown by a modified Bridgman method in the compositional range of 0≤X≤0.25 have been identified. All crystals show only near-band-edge emission. To assist in the identification, various samples with different compositions were annealed under a Cd atmosphere. In the pure crystals, the prominent (A°, X) bound exciton line, as well as the doublet at longer wavelengths, disappear after the annealing. In contrast, the treatments do not change significantly the PL spectra of the mixed crystals.