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On The Kinetics Of Thermal Donor Formation In Silicon, J T. Borenstein, J W. Corbett, David Peak
On The Kinetics Of Thermal Donor Formation In Silicon, J T. Borenstein, J W. Corbett, David Peak
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A model for the kinetic growth of oxygen-related thermal donors in Czochralski silicon at about 450°C is presented. The model, which is based on the work of Suezawa and Sumino, derives forward reaction rates for the electrically active species by comparing analytic expressions for the early-time annealing kinetics with the infrared electronic absorption data. The analytic expressions, which are independent of the chemical structure of each species, result from three assumptions: (1) the donor defects beyond the first donor species (TD-1) are chemically stable at the donor formation temperature, (2) the reactions for the TD-1 and those electrically inactive clusters …