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Role Of Sn In The Density Of Defect States In A-Se_{0.75}Te_{0.25} And A-Se_{0.85}Te_{0.15}Thin Films, N. Sharma, Santosh Kumar
Role Of Sn In The Density Of Defect States In A-Se_{0.75}Te_{0.25} And A-Se_{0.85}Te_{0.15}Thin Films, N. Sharma, Santosh Kumar
Turkish Journal of Physics
In this paper we report the effect of Sn incorporation in the density of defect states of two binary Se-Te glassy systems, comparing the properties of a-Se_{0.75}Te_{0.25}, a-Se_{0.85}Te_{0.15} and a-Se_{0.75}Te_{0.15}Sn_{0.10} glassy alloys. Properties of d.c. conductivity at high electric fields in vacuum were examined; and current-voltage (I-V) characteristics have been measured at various fixed temperatures. Ohmic behavior is observed at low electric fields; while at high electric fields (E \sim 10^4 V/cm), non-ohmic behavior is observed. An analysis of the experimental data confirms the presence of space charge limited conduction (SCLC) in the studied glassy materials. Density of defect states …
Preparation And Study Of The Structural, Optical And Electrical Properties Of Cu(In,Ga)Se_2 Thin Films, Athar Javed
Preparation And Study Of The Structural, Optical And Electrical Properties Of Cu(In,Ga)Se_2 Thin Films, Athar Javed
Turkish Journal of Physics
Thin film samples of Cu(In,Ga)Se_2 (CIGS) were prepared at room temperature by physical vapor deposition (PVD) technique using resistive heating method onto soda lime glass substrates. Deposition conditions were same for all the samples. The prepared samples were annealed in vacuum at temperature of 200 °C for 5, 10, 15, 30 and 60 minutes and were characterized structurally, optically and electrically. The structural analysis indicate the partial formation of quaternary CIGS compounds for the samples which were annealed in vacuum at 200 °C for 30 and 60 minutes. XRD analysis indicate that there is a continuous growth and improvement in …
Opto-Electrical Properties Of Copper-Indium-Selenium Thin Films, S. F. Shaukat, S. A. Khan, Robina Farooq
Opto-Electrical Properties Of Copper-Indium-Selenium Thin Films, S. F. Shaukat, S. A. Khan, Robina Farooq
Turkish Journal of Physics
Copper-Indium-Selenium (CIS) thin films have been characterised using various experimental techniques. These compounds are extensively used in solar cell technology as absorber layers due to their exciting characteristics. Optical transmission measurements on different compositions of CIS films are observed and the absorption coefficient is determined. The Van der Pauw technique is used to divulge the electrical characteristics of these films. The electrical conductivity is found relatively high for the films annealed in vacuum but decreases for films synthesised optimally. It is observed that p-type films have higher conductivity than n-type films. The grain size, composition, structure and the spacing of …