Physics Commons^™

Switching Behaviors Of Graphene-Boron Nitride Nanotube Heterojunctions, Vyom Parashar, Corentin Durand, Boyi Hao, Rodrigo Amorim, Ravindra Pandey, Bishnu Tiwari, Dongyan Zhang, Yang Liu, An-Ping Li, Yoke Khin Yap

Department of Physics Publications

High electron mobility of graphene has enabled their application in high-frequency analogue devices but their gapless nature has hindered their use in digital switches. In contrast, the structural analogous, h-BN sheets and BN nanotubes (BNNTs) are wide band gap insulators. Here we show that the growth of electrically insulating BNNTs on graphene can enable the use of graphene as effective digital switches. These graphene-BNNT heterojunctions were characterized at room temperature by four-probe scanning tunneling microscopy (4-probe STM) under real-time monitoring of scanning electron microscopy (SEM). A switching ratio as high as 10⁵ at a turn-on voltage as low …