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Full-Text Articles in Physics

Creation Of Multiple Electron-Positron Pairs In Arbitrary Fields, T Cheng, Q Su, Rainer Grobe Jul 2009

Creation Of Multiple Electron-Positron Pairs In Arbitrary Fields, T Cheng, Q Su, Rainer Grobe

Faculty publications – Physics

We examine the spontaneous breakdown of the matter vacuum triggered by an external force of arbitrary strength and spatial and temporal variations. We derive a nonperturbative framework that permits the computation of the complete time evolution of various multiple electron-positron pair probabilities. These time-dependent probabilities can be computed from a generating function as well as from solutions to a set of ratelike equations with coupling constants determined by the single-particle solutions to the time-dependent Dirac equation. This approach might be of relevance to the planned experiments to observe for the first time the laser-induced breakdown process of the vacuum.


Limitations Of Decomposition-Based Imaging Of Longitudinal Absorber Configurations, S D. Campbell, S D. Grobe, I L. Goodin, Q Su, Rainer Grobe Feb 2008

Limitations Of Decomposition-Based Imaging Of Longitudinal Absorber Configurations, S D. Campbell, S D. Grobe, I L. Goodin, Q Su, Rainer Grobe

Faculty publications – Physics

We examine theoretically and experimentally an imaging scheme that uses the transverse intensity profile of the scattered light to reconstruct the locations of absorbers embedded in a turbid medium. This method is based on an a priori knowledge of the scattered light patterns associated with a single absorber that is located at various positions inside the medium. We discuss the range of validity of this method, and its sensitivity with regard to noise, and propose an algorithm to improve its accuracy.


Decomposition-Based Recovery Of Absorbers In Turbid Media, S D. Campbell, I L. Goodin, S D. Grobe, Qichang Su, Rainer Grobe Dec 2007

Decomposition-Based Recovery Of Absorbers In Turbid Media, S D. Campbell, I L. Goodin, S D. Grobe, Qichang Su, Rainer Grobe

Faculty publications – Physics

We suggest that the concept of the point-spread function traditionally used to predict the blurred image pattern of various light sources embedded inside turbid media can be generalized under certain conditions to predict also the presence and location of spatially localized absorbing inhomogeneities based on shadow point-spread functions associated with each localized absorber in the medium. The combined image obtained from several absorbers can then be decomposed approximately into the arithmetic sums of these individual shadow point-spread functions with suitable weights that can be obtained from multiple-regression analysis. This technique permits the reconstruction of the location of absorbers.


Microscopic Theory Of The Low Frequency Raman Modes In Germanium Nanocrystals, Shang-Fen Ren, Peter Y. Yu May 2005

Microscopic Theory Of The Low Frequency Raman Modes In Germanium Nanocrystals, Shang-Fen Ren, Peter Y. Yu

Faculty publications – Physics

We have studied the Raman intensities of low-frequency phonon modes in germanium (Ge) nanocrystals (NC) with varying sizes by using a microscopic valence force field model. The results are compared with the predictions of the continuum model of Lamb using a projection method. We found that the l=0 spheroidal Lamb modes are Raman active in the parallel polarization scattering geometry, while the l=2 spheroidal Lamb modes are active in the crossed polarization geometry. This result agrees with the group theory prediction that the torsional Lamb modes are not Raman active, but is in disagreement with the identification of torsional Lamb …


Calculations Of Surface Effects On Phonon Modes And Raman Intensities Of Ge Quantum Dots, Shang-Fen Ren, Wei Cheng Nov 2002

Calculations Of Surface Effects On Phonon Modes And Raman Intensities Of Ge Quantum Dots, Shang-Fen Ren, Wei Cheng

Faculty publications – Physics

Phonon modes and Raman intensities of Ge quantum dots (QDs) with two different types of surfaces, a free standing surface or a fixed surface, in a size range from five atoms to 7 nm in diameter, are calculated by using a microscopic valence force field model. The results are compared, and the effects of surfaces on phonon properties of QDs are investigated. It is found that phonon modes and Raman intensities of QDs with these two different types of surfaces have obvious differences which clearly reveal the effects of the surfaces of QDs. The calculated results agree with existing experimental …


Calculations On The Size Effects Of Raman Intensities Of Silicon Quantum Dots, Wei Cheng, Shang-Fen Ren May 2002

Calculations On The Size Effects Of Raman Intensities Of Silicon Quantum Dots, Wei Cheng, Shang-Fen Ren

Faculty publications – Physics

Raman intensities of Si quantum dots (QD's) with up to 11489 atoms (about 7.6 nm in diameter) for different scattering configurations are calculated. First, phonon modes in these QD's, including all vibration frequencies and vibration amplitudes, are calculated directly from the lattice-dynamic matrix by using a microscopic valence force field model combined with the group theory. Then the Raman intensities of these quantum dots are calculated by using a bond-polarizability approximation. The size effects of the Raman intensity in these QD's are discussed in detail based on these calculations. The calculations are compared with the available experimental observations. We are …


Electrons In Image States Near Roughened Metal Surfaces, Brian K. Clark, Brian W. Gregory, Jean M. Standard Dec 2000

Electrons In Image States Near Roughened Metal Surfaces, Brian K. Clark, Brian W. Gregory, Jean M. Standard

Faculty Publications – Chemistry

Electrons near roughened Ag and Au surfaces with chemisorbed dielectric overlayers of alkanethiol or alkaneselenol self-assembled monolayers are shown to move within the sulfur or selenium head-group layer on the metal terraces. The electrons exist in image states with respect to Ag or Au step edges. There is no substantial image force between the electrons and the terraces.