Physics Commons^™

Formation Energies And Energy Levels Of Deep Defects In Narrow-Gap Semiconductors, James D. Patterson, Weigang Li

Aerospace, Physics, and Space Science Faculty Publications

We use a Green's function technique for deep defect energy level calculations in mercury cadmium telluride, mercury zinc telluride, and mercury zinc selenide. The formation energy is calculated from the difference between the total binding energy with an impurity cluster and with a perfect cluster. These alloys are among those that have been experimentally grown in microgravity aboard the Space Shuttle. To evaluate the quality of these crystals, it is necessary to characterize them, and one important aspect of this characterization is the study of deep defects which can limit carrier lifetime. Relaxation effects are calculated with molecular dynamics. The …