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Effect Of As Flux On Inas Submonolayer Quantum Dot Formation For Infrared Photodetectors, K. D. Vallejo, P. J. Simmonds
Effect Of As Flux On Inas Submonolayer Quantum Dot Formation For Infrared Photodetectors, K. D. Vallejo, P. J. Simmonds
Physics Faculty Publications and Presentations
The performance of infrared photodetectors based on submonolayer quantum dots was investigated as a function of the arsenic flux. All the devices showed similar figures of merit and a very high specific detectivity above 1 × 1011 cm Hz1/2/W at 12 K, despite the fact that cross-sectional scanning tunneling microscopy images pointed out a strong reduction in the density of such nanostructures with decreasing arsenic flux. This contrast is a consequence of the small size and low In content of the submonolayer quantum dots that lead to a strong delocalization of the electrons wave function and, therefore, …