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Tensile Gaas(111) Quantum Dashes With Tunable Luminescence Below The Bulk Bandgap, Paul J. Simmonds
Tensile Gaas(111) Quantum Dashes With Tunable Luminescence Below The Bulk Bandgap, Paul J. Simmonds
Paul J. Simmonds
Strain-based band engineering in quantum dots and dashes has been predominantly limited to compressively strained systems. However, tensile strain strongly reduces the bandgaps of nanostructures, enabling nanostructures to emit light at lower energies than they could under compressive strain. We demonstrate the self-assembled growth of dislocation-free GaAs quantum dashes on an InP(111)B substrate, using a 3.8% tensile lattice-mismatch. Due to the high tensile strain, the GaAs quantum dashes luminesce at 110–240 meV below the bandgap of bulk GaAs. The emission energy is readily tuned by adjusting the size of the quantum dashes via deposition thickness. Tensile self-assembly creates new opportunities …
Tensile-Strained Growth On Low-Index Gaas, Paul J. Simmonds, Minjoo Larry Lee
Tensile-Strained Growth On Low-Index Gaas, Paul J. Simmonds, Minjoo Larry Lee
Paul J. Simmonds
We present a comparative study of the growth of tensile-strained GaP on the four low-index surfaces of GaAs: (001), (110), (111)A, and (111)B. For each surface orientation we outline the growth conditions required for smooth GaAshomoepitaxy. We are able to predict the resulting surface morphology when GaP is deposited onto these four GaAssurfaces by considering the influence of surface orientation on tensile strain relief. GaP deposited on GaAs(001) forms extremely smooth, planar layers. In contrast, the elastic relief of tensile strain on both GaAs(110) and GaAs(111)A leads to the three-dimensional self-assembly of GaP into dislocation-free nanostructures. Similarities between tensile and …
Self-Assembly On (111)-Oriented Iii-V Surfaces, Paul J. Simmonds, Minjoo Larry Lee
Self-Assembly On (111)-Oriented Iii-V Surfaces, Paul J. Simmonds, Minjoo Larry Lee
Paul J. Simmonds
We demonstrate the self-assembly of tensile strained GaP into three-dimensional dots on GaAs(111)A. Size and areal density of the dislocation-free GaPdots are readily tunable with both substrate temperature and deposition thickness. GaP dot growth obeys island scaling theory, allowing us to predict dot size distributions a priori.